Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor
A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the base causes a germanium-enriched region to form on a surface of the silicon-germanium portion subjected to the thermal oxidation. An emitter is formed overlying the germanium-enriched portion region. The germanium-enriched region imparts advantageous operating properties to the heterojunction bipolar transistor, including improved high-frequency/high-speed operation.
1. A method of manufacturing a semiconductor device comprising:
epitaxially growing a silicon-germanium base on a collector;
thermally oxidizing the base to preferentially grow silicon dioxide on an upper surface of the base to form a germanium-enriched region in an upper region of the base;
annealing the semiconductor device to redistribute germanium atoms of the germanium-enriched region;
removing the silicon dioxide; and
depositing an emitter overlying the base.
2. The method of claim 1 wherein the germanium-enriched region has a low level of lattice defects.
3. The method of claim 1 wherein prior to the step of thermally oxidizing, the silicon-germanium base comprises a graded doped silicon-germanium base or a stepped doped silicon-germanium base.
4. The method of claim 1 wherein prior to the step of thermally oxidizing, the silicon-germanium base comprises a uniformly doped silicon-germanium base.
5. The method of claim 1 wherein a concentration of germanium in the germanium-enriched region ranges from about 30 percent to about 75 percent relative to a concentration of silicon in the germanium-enriched region.
6. The method of claim 1 wherein the step of thermally oxidizing the base comprises thermally oxidizing the base within a temperature range of about 700 to about 900 degrees Celsius.
7. The method of claim 1 wherein the germanium-enriched region contacts with the emitter.
8. The method of claim 1 wherein a concentration of germanium in the germanium-enriched region decreases abruptly from a concentration in the upper region of the base in a direction toward the collector.
9. The method of claim 1 wherein the step of thermally oxidizing the base further comprises thermally oxidizing the base to preferentially grow silicon dioxide on an upper surface of the base to form the germanium-enriched region adjacent the silicon dioxide.
10. The method of claim 1 wherein the annealing step increases a germanium concentration in a region of the base proximate the germanium-enriched region.
11. The method of claim 1 wherein the silicon-germanium base comprises a silicon-germanium layer within a base.
12. The method of claim 1 wherein the annealing occurs after depositing the emitter.
13. A method of manufacturing a semiconductor device comprising:
forming a base on a silicon collector, wherein the base comprises a silicon-germanium layer proximate an upper surface thereof;
thermally oxidizing the silicon-germanium layer to form a germanium-enriched portion proximate the upper surface, wherein the germanium-enriched portion has a significantly greater germanium concentration than a remainder of the base;
annealing the semiconductor device to redistribute germanium atoms of the germanium-enriched portion; and
forming an emitter on the germanium-enriched portion.
14. The method of claim 13 wherein the germanium-enriched portion has a germanium concentration greater than about 30%.
15. The method of claim 13 wherein the annealing occurs after forming the emitter.
16. A method of manufacturing a semiconductor device comprising:
forming a silicon-germanium base region, having a first upper surface, over a collector region;
reacting the base region along the upper surface to form a thermally grown oxide in the first upper surface, and thereby to form a germanium-enriched portion proximate an upper surface of the base region;
removing the thermally grown oxide to expose a second upper surgace of the base region;
annealing the semiconductor device to redistribute germanium atoms of the germanium-enriched portion; and
forming an emitter region over the base.
17. The method of claim 16 wherein the step of reacting the base region further comprises varying a germanium concentration such that the germanium concentration is greater near the second upper surface.
18. The method of claim 17 wherein the germanium concentration near the second surface is between about 30 percent and about 75 percent relative to the concentration of silicon near the second surface.
19. The method of claim 16 wherein the step of reacting the base region further comprises reacting the base region within a temperature range of about 700 to about 900 degrees Celsius.
20. The method of claim 16 wherein the annealing occurs after forming the emitter region.