Defectivity-immune technique of implementing MIM-based decoupling capacitors
View Patent ↗An integrated circuit power supply decoupling circuit includes a capacitor and a protection circuit. The capacitor has a first terminal and a second terminal. The protection circuit includes a first transistor having a first conduction path, and a second transistor having a second conduction path. One terminal of the first conduction path is connected to the first terminal of the capacitor, and another terminal of the first conduction path is connected to a first power supply rail. One terminal of the second conduction path is connected to the second terminal of the capacitor, and another terminal of the second conduction path is connected to a second power supply rail.
1. An integrated circuit power supply decoupling circuit, comprising:
a capacitor having a first terminal and a second terminal; and
a protection circuit comprising:
a first transistor having a first conduction path and a first control terminal for controlling said first conduction path, one terminal of said first conduction path being connected to said first terminal, another terminal of said first conduction path being connected to a first power supply rail and said first control terminal being connected to said second terminal; and
a second transistor having a second conduction path and a second control terminal for controlling said second conduction path, one terminal of said second conduction path being connected to said second terminal, another terminal of said second conduction path being connected to a different second power supply rail and said second control terminal being connected to said first terminal.
2. The decoupling circuit as recited in claim 1 , wherein said capacitor is a first capacitor, and further comprising a second capacitor connected to said first and said second conduction paths in parallel with said first capacitor.
3. The decoupling circuit as recited in claim 1 , wherein said first transistor is a p-channel FET having a first source, a first gate and a first drain, and said second transistor is an re-channel FET having a second source, a second gate and a second drain, and said first gate is conductively coupled to said second drain and said second terminal of said capacitor, and said second gate is conductively coupled to said first drain and said first terminal of said capacitor.
4. The decoupling circuit as recited in claim 1 , wherein said first and said second power supply rails are power supply rails of an integrated circuit comprising higher-V t FETs and lower-V t FETs, and said first and second transistors are lower-V t FETS.
5. The decoupling circuit as recited in claim 1 , wherein said capacitor is one of a linear array of a plurality of capacitors connected in parallel, and said protection circuit is a first protection circuit located at a first end of said linear array, and further comprising a second protection circuit located at a second end of said linear array.
6. The decoupling circuit as recited in claim 1 , wherein said first and said second transistors are bipolar transistors.
7. The decoupling circuit as recited in claim 1 , wherein a current between said first and second power supply rails through said protection circuit has an associated current characteristic that exhibits a local maximum between a low resistance of said capacitor and a high resistance of said capacitor.
8. An integrated circuit, comprising:
a device substrate;
active circuitry located over said substrate and configured to be powered by a first power supply rail and a second power supply rail;
a capacitor having a first terminal and a second terminal, being configured to reduce power supply noise on said first and second power supply rails; and
a protection circuit configured to limit a current through said capacitor, comprising:
a first transistor having a first conduction path and a first control terminal for controlling said first conduction path, one terminal of said first conduction path being connected to said first terminal, another terminal of said first conduction path being connected to said first power supply rail and said first control terminal being connected to said second terminal; and
a second transistor having a second conduction path and a second control terminal for controlling said second conduction path, one terminal of said second conduction path being connected to said second terminal, another terminal of said second conduction path being connected to said second power supply rail and said second control terminal being connected to said first terminal.
9. The integrated circuit as recited in claim 8 , wherein said capacitor is a first capacitor, and further comprising a second capacitor connected to said first and said second conduction paths in parallel with said first capacitor.
10. The integrated circuit as recited in claim 8 , wherein said first transistor is a p-channel FET having a first source, a first gate and a first drain, and said second transistor is an n-channel FET having a second source, a second gate and a second drain, and said first gate is conductively coupled to said second drain and said second terminal of said capacitor, and said second gate is conductively coupled to said first drain and said first terminal of said capacitor.
11. The integrated circuit as recited in claim 8 , further comprising higher-V t FETs and lower-V t FETs, wherein said first and second transistors are lower-V t FETS.
12. The integrated circuit as recited in claim 8 , wherein said capacitor is one of a linear array of a plurality of capacitors connected in parallel, and said protection circuit is a first protection circuit located at a first end of said linear array, and further comprising a second protection circuit located at a second end of said linear array.
13. The integrated circuit as recited in claim 8 , wherein said first and said second transistors are bipolar transistors.
14. The integrated circuit as recited in claim 8 , wherein a current between said first and second power supply rails through said protection circuit has an associated current characteristic that exhibits a local maximum between a low resistance of said capacitor and a high resistance of said capacitor.
15. A method of manufacturing an integrated circuit, comprising:
providing a substrate;
forming active circuitry over said substrate;
configuring said active circuitry to be powered by a first power supply rail and a second power supply rail;
configuring a decoupling capacitor located over said substrate to filter power supply noise on said first and second power supply rails; and
locating over said substrate a protection circuit configured to limit a current through said capacitor, said protection circuit comprising:
a first transistor having a first conduction path and a first control terminal for controlling said first conduction path, one terminal of said first conduction path being connected to a first terminal of said capacitor, another terminal of said first conduction path being connected to said first power supply rail and said first control terminal being connected to said second terminal; and
a second transistor having a second conduction path and a second control terminal for controlling said second conduction path, one terminal of said second conduction path being connected to a second terminal of said capacitor, another terminal of said second conduction path being connected to said second power supply rail and said second control terminal being connected to said first terminal.
16. The method as recited in claim 15 , wherein said capacitor is a first capacitor, and further comprising connecting a second capacitor to said first and said second conduction paths in parallel with said first capacitor.
17. The method as recited in claim 15 , wherein said first transistor is a p-channel FET having a first source, a first gate and a first drain, and said second transistor is an n-channel FET having a second source, a second gate and a second drain, and said first gate is conductively coupled to said second drain and said second terminal of said capacitor, and said second gate is conductively coupled to said first drain and said first terminal of said capacitor.
18. The method as recited in claim 15 , wherein said active circuitry comprises higher-V t FETs and lower-V t FETs, and wherein said first and second transistors are lower-V t FETS.
19. The method as recited in claim 15 , further comprising connecting a plurality of capacitors in parallel with said decoupling capacitor, said protection circuit being a first protection circuit located at a first end of said linear array, further comprising connecting a second protection circuit to another end of said linear array.
20. The method as recited in claim 15 , wherein said first and said second transistors are bipolar transistors.