Semiconductor device and method of forming semiconductor package using panel form carrier

1. A method of making a semiconductor device, comprising:

providing an insulating layer;

forming a first conductive layer over the insulating layer;

forming a second conductive layer over a first surface of the first conductive layer extending from a peripheral region of the semiconductor device to a die mounting site;

disposing a first semiconductor die over the first surface of the first conductive layer at the die mounting site;

forming a bond wire between a contact pad on the first semiconductor die and the second conductive layer;

depositing a first encapsulant over the first semiconductor die;

forming an opening in the insulating layer over a second surface of the first conductive layer opposite the first surface of the first conductive layer; and

removing a portion of the first conductive layer within the opening in the insulating layer.

2. The method of claim 1 , wherein a portion of the second conductive layer extends over the first semiconductor die.

3. The method of claim 1 , further including depositing a second encapsulant over the first encapsulant.

4. The method of claim 1 , further including retaining a portion of the first conductive layer over the semiconductor die for heat dissipation.

5. The method of claim 1 , further including disposing a second semiconductor die over the first semiconductor die prior to depositing the first encapsulant.

6. The method of claim 1 , further including disposing a discrete device over the second conductive layer prior to depositing the first encapsulant.

7. A method of making a semiconductor device, comprising:

forming a first insulating layer;

forming a first conductive layer over the first insulating layer;

disposing a first semiconductor die over the first conductive layer;

depositing an encapsulant over the first semiconductor die;

forming an opening in the first insulating layer over the first conductive layer; and

removing a portion of the first conductive layer within the opening in the first insulating layer.

8. The method of claim 7 , further including:

forming a second insulating layer over the first conductive layer;

forming a plurality of vias through the second insulating layer; and

forming a second conductive layer over the second insulating layer and extending into the vias.

9. The method of claim 8 , wherein the second conductive layer extends to a mounting site of the first semiconductor die.

10. The method of claim 7 , further including disposing a second semiconductor die over the first semiconductor die prior to depositing the encapsulant.

11. The method of claim 7 , further including:

forming a second conductive layer over the first insulating layer;

disposing a second semiconductor die over the first semiconductor die prior to depositing the encapsulant; and

forming a bond wire between contact pads on the second semiconductor die and the second conductive layer.

12. The method of claim 7 , further including disposing a second semiconductor die over the first semiconductor die.

13. The method of claim 7 , further including:

forming a second conductive layer over the first insulating layer; and

disposing a discrete device over the second conductive layer prior to depositing the encapsulant.

14. A method of making a semiconductor device, comprising:

forming a first conductive layer;

forming an insulating layer over the first conductive layer;

forming a plurality of vias through the insulating layer;

forming a second conductive layer over the insulating layer and extending into the vias to the first conductive layer;

disposing a first semiconductor die over the first conductive layer including a contact pad of the first semiconductor die electrically connected to the second conductive layer; and

removing a portion of the first conductive layer to separate a first segment of the first conductive layer from a second segment of the first conductive layer after forming the insulating layer.

15. The method of claim 14 , further including forming a bond wire between the contact pad of the first semiconductor die and the second conductive layer.

16. The method of claim 14 , further including forming a bump over the contact pad of the first semiconductor die to electrically connect the first semiconductor die to the second conductive layer.

17. The method of claim 14 , further including depositing an encapsulant over the first semiconductor die.

18. The method of claim 17 , further including disposing a second semiconductor die over the first semiconductor die prior to depositing the encapsulant.

19. The method of claim 18 , further including forming a bond wire between contact pads on the second semiconductor die and the second conductive layer.

20. The method of claim 17 , further including disposing a discrete device over the second conductive layer prior to depositing the encapsulant.

21. A method of making a semiconductor device, comprising:

providing a first conductive layer;

forming a second conductive layer over the first conductive layer extending from a peripheral region of the semiconductor device to a die mounting site; and

disposing a first semiconductor die over a first surface of the first conductive layer at the die mounting site including a contact pad of the first semiconductor die electrically connected to the first conductive layer.

22. The method of claim 21 , further including:

forming an insulating layer including a plurality of vias; and

forming the second conductive layer over the insulating layer and extending into the vias.

23. The method of claim 21 , further including depositing an encapsulant over the first semiconductor die.

24. The method of claim 23 , further including disposing a discrete device over the first conductive layer prior to depositing the encapsulant.

25. The method of claim 21 , further including disposing a second semiconductor die over the first semiconductor die.