Semiconductor Device and Method of Forming Sloped Surface in Patterning Layer to Separate Bumps of Semiconductor Die from Patterning Layer

1 . A method of making a semiconductor device, comprising:

providing a semiconductor die;

forming a plurality of bumps over a surface of the semiconductor die;

providing a substrate;

forming a first conductive layer over the substrate;

forming a patterning layer over the substrate and first conductive layer;

disposing a masking layer having an opaque portion and gradient contrast portion over the patterning layer;

exposing the patterning layer to ultraviolet light through the masking layer;

removing the masking layer;

removing a portion of the patterning layer to form an opening having a sloped surface to expose the first conductive layer; and

mounting the semiconductor die to the substrate with the bumps electrically connected to the first conductive layer and physically separated from the patterning layer.

2 . The method of claim 1 , wherein the gradient contrast portion transitions from near transparent to near opaque.

3 . The method of claim 1 , further including removing the portion of the patterning layer by an etching process.

4 . The method of claim 1 , wherein the sloped surface in the patterning layer is linear, concave, or convex.

5 . The method of claim 1 , further including depositing an underfill material between the semiconductor die and substrate.

6 . The method of claim 1 , further including:

forming a second conductive layer over a surface of the substrate opposite the first conductive layer; and

forming an insulating layer over the surface of the substrate.

7 . A method of making a semiconductor device, comprising:

providing a semiconductor die;

forming an interconnect structure over a surface of the semiconductor die;

providing a substrate;

forming a first conductive layer over the substrate;

forming a patterning layer over the substrate and first conductive layer;

forming an opening having a sloped surface in the patterning layer to expose the first conductive layer; and

mounting the semiconductor die to the substrate with the interconnect structure electrically connected to the first conductive layer and separated from the patterning layer.

8 . The method of claim 7 , further including:

disposing a masking layer having an opaque portion and gradient contrast portion over the patterning layer;

exposing the patterning layer to ultraviolet light through the masking layer;

removing the masking layer; and

forming the opening having the sloped surface in the patterning layer to expose the first conductive layer.

9 . The method of claim 8 , wherein the gradient contrast portion transitions from near transparent to near opaque.

10 . The method of claim 7 , wherein the sloped surface in the patterning layer is linear, concave, or convex.

11 . The method of claim 7 , further including forming the sloped surface in patterning layer by laser direct ablation.

12 . The method of claim 7 , further including depositing an underfill material between the semiconductor die and substrate.

13 . The method of claim 7 , further including:

forming a second conductive layer over a surface of the substrate opposite the first conductive layer; and

forming an insulating layer over the surface of the substrate.

14 . A method of making a semiconductor device, comprising:

providing a substrate;

forming a first conductive layer over the substrate;

forming a patterning layer over the substrate and first conductive layer; and

forming an opening having a sloped surface in the patterning layer to expose the first conductive layer.

15 . The method of claim 14 , further including mounting a semiconductor die to the substrate with an interconnect structure separated from the sloped surface of the patterning layer.

16 . The method of claim 15 , further including depositing an underfill material between the semiconductor die and substrate.

17 . The method of claim 14 , further including:

disposing a masking layer having an opaque portion and gradient contrast portion over the patterning layer;

exposing the patterning layer to ultraviolet light through the masking layer;

removing the masking layer; and

forming the opening having the sloped surface in the patterning layer to expose the first conductive layer.

18 . The method of claim 17 , wherein the gradient contrast portion transitions from near transparent to near opaque.

19 . The method of claim 14 , further including forming the sloped surface in patterning layer by laser direct ablation.

20 . The method of claim 14 , further including:

forming a second conductive layer over a surface of the substrate opposite the first conductive layer; and

forming an insulating layer over the surface of the substrate.

21 . A semiconductor device, comprising:

a substrate;

a first conductive layer formed over the substrate;

a patterning layer formed over the substrate and first conductive layer; and

an opening having a sloped surface formed in the patterning layer to expose the first conductive layer.

22 . The semiconductor device of claim 21 , further including:

a semiconductor die; and

an interconnect structure disposed between the semiconductor die and substrate, the interconnect structure being separated from the sloped surface of the patterning layer.

23 . The semiconductor device of claim 21 , further including a masking layer having an opaque portion and gradient contrast portion disposed over the patterning layer.

24 . The semiconductor device of claim 21 , wherein the sloped surface in patterning layer is formed by laser direct ablation.

25 . The semiconductor device of claim 21 , further including:

a second conductive layer formed over a surface of the substrate opposite the first conductive layer; and

an insulating layer formed over the surface of the substrate.