Semiconductor device and method of forming compliant conductive interconnect structure in flipchip package
View Patent ↗A semiconductor device has a semiconductor die. The semiconductor die has a contact pad. A first conductive layer is formed over the contact pad. A conductive shell having a hollow core is formed over the first conductive layer. A compliant material is deposited in the hollow core. The semiconductor die is mounted over a substrate with the conductive shell electrically connected to a conductive trace on the substrate. A second conductive layer is formed over the conductive shell. The compliant material is an insulating material. A bump material is deposited around the conductive shell. A pre-solder material is deposited over the conductive trace. The conductive shell has a cross-sectional width less than 7 micrometers. The second conductive layer is a conductive lip. Mounting the semiconductor die over the substrate further includes mounting the semiconductor die over the substrate in a bump on lead (BOL) configuration.
1. A method of making a semiconductor device, comprising:
providing a semiconductor die including a contact pad;
forming a first conductive layer over the contact pad;
forming a conductive shell including a hollow core over the first conductive layer;
depositing a compliant insulating material in the hollow core; and
disposing the semiconductor die over a substrate with the conductive shell electrically connected to a conductive trace on the substrate.
2. The method of claim 1 , further including depositing a bump material around the conductive shell.
3. The method of claim 1 , further including forming a second conductive layer over the conductive shell.
4. The method of claim 3 , wherein the second conductive layer is a conductive lip.
5. The method of claim 1 , wherein the conductive shell includes a cross-sectional width less than 7 micrometers.
6. A method of making a semiconductor device, comprising:
providing a semiconductor die including a contact pad;
forming a first conductive layer over the contact pad;
forming a conductive shell including a hollow core over the first conductive layer;
disposing a bump material over the hollow core; and
disposing the semiconductor die over a substrate with the conductive shell electrically connected to a conductive trace on the substrate, the hollow core disposed over the conductive trace.
7. The method of claim 6 , further including forming a second conductive layer over the conductive shell.
8. The method of claim 7 , wherein disposing the semiconductor die over the substrate further includes disposing the semiconductor die over the substrate in a bump on lead (BOL) configuration.
9. The method of claim 6 , wherein the conductive shell includes a cross-sectional width less than 7 micrometers.
10. The method of claim 6 , further including depositing the bump material around the conductive shell.
11. A method of making a semiconductor device, comprising:
providing a first substrate;
forming a first insulating layer including an opening over the first substrate;
forming a compliant composite conductive interconnect structure over the first substrate within the opening in the first insulating layer;
removing the first insulating layer to form a hollow core in the compliant composite conductive interconnect structure; and
forming a second insulating layer within the hollow core.
12. The method of claim 11 , wherein the second insulating layer includes a compliant material.
13. The method of claim 11 , wherein forming the compliant composite conductive interconnect structure includes:
forming a conductive shell over the first substrate; and
forming a conductive layer over the conductive shell.
14. The method of claim 11 , further including:
disposing a semiconductor die over the first substrate; and
forming an encapsulant over the semiconductor die.
15. The method of claim 11 , further including forming a conductive layer over the first substrate, wherein the compliant composite conductive interconnect structure includes a width less than a width of the conductive layer.
16. The method of claim 11 , further including disposing the first substrate over a second substrate.
17. A semiconductor device, comprising:
a substrate;
a compliant composite conductive interconnect structure formed over the substrate, wherein the compliant composite conductive interconnect structure includes a hollow core;
a conductive layer formed over the hollow core of the compliant composite conductive interconnect structure; and
a bump formed over the compliant composite conductive interconnect structure.
18. The semiconductor device of claim 17 , wherein the compliant composite conductive interconnect structure further includes:
a conductive shell formed over the substrate; and
the conductive layer formed over the conductive shell.
19. The semiconductor device of claim 18 , wherein the compliant composite conductive interconnect structure includes a Young's modulus less than a Young's modulus of the conductive shell.
20. The semiconductor device of claim 17 , wherein the compliant composite conductive interconnect structure includes a cross-sectional width less than 7 micrometers.
21. The semiconductor device of claim 17 , wherein the substrate includes a semiconductor die.