Charge sensors using inverted lateral bipolar junction transistors
View Patent ↗A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.
1. A sensor, comprising:
a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor;
a level surface formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor; and
a detection layer directly on an entirety of the level surface.
2. The sensor as recited in claim 1 , wherein the base electrode is selectively activated to enable the inverted bipolar junction transistor to make a measurement.
3. The sensor as recited in claim 1 , wherein accumulated charge at or near the level surface affects a collector current of the inverted bipolar junction transistor.
4. The sensor as recited in claim 3 , wherein an exponential relationship exists between the collector current and a voltage caused by the accumulated charge.
5. The sensor as recited in claim 1 , wherein an accumulated charge in the detection layer is proportional to a dose or number of interactions with material to be measured at the detection layer.
6. The sensor as recited in claim 5 , wherein the detection layer includes an accumulation layer and a conversion layer such that the conversion layer turns interactions therewith into charge which is accumulated in the accumulation layer.
7. The sensor as recited in claim 6 , wherein the conversion layer converts incident radiation into charge, the radiation including at least one of alpha particles, beta particles, protons, neutrons, and electromagnetic radiation.
8. A sensor, comprising:
a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction;
a level surface formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor; and
a detection layer disposed over an entirety of the level surface and configured to interface with an item to be measured such that interaction or contact with the substance generates the charge measurable by the bipolar junction transistor.
9. The sensor as recited in claim 8 , wherein the base electrode is selectively activated to enable the inverted bipolar junction transistor to make a measurement.
10. The sensor as recited in claim 8 , wherein accumulated charge at or near the level surface affects a collector current of the inverted bipolar junction transistor.
11. The sensor as recited in claim 10 , wherein an exponential relationship exists between the collector current and a voltage caused by the accumulated charge.
12. The sensor as recited in claim 8 , wherein the detection layer stores an accumulated charge, which is proportional to a dose or number of interactions with the item to be measured.
13. The sensor as recited in claim 8 , wherein the detection layer includes an accumulation layer and a conversion layer such that the conversion layer turns interactions therewith into charge which is accumulated in the accumulation layer.
14. The sensor as recited in claim 13 , wherein the conversion layer converts incident radiation into charge, the radiation including at least one of alpha particles, beta particles, protons, neutrons, and electromagnetic radiation.
15. A sensor, comprising:
a base substrate including a monocrystalline semiconductor material;
a base-region barrier extending from the base substrate and including a monocrystalline structure having a same dopant conductivity as the base substrate;
an emitter contacting a first lateral side of the base-region barrier; and
a collector contacting a second lateral side opposite the emitter to form a bipolar junction transistor, the emitter and collector being spaced from the base substrate by a buried dielectric layer, the collector, the emitter and the base-region barrier forming a level surface opposite the base substrate; and
a detection layer disposed over an entirety of the level surface such that when the detection layer is exposed to charge, the charge is measured during operation of the bipolar junction transistor.
16. The sensor as recited in claim 15 , wherein the base substrate forms a base electrode to selectively enable operation of the inverted bipolar junction transistor and accumulated charge at or near the level surface affects a collector current of the inverted bipolar junction transistor and further wherein an exponential relationship exists between the collector current and a voltage caused by the accumulated charge.
17. The sensor as recited in claim 15 , wherein the detection layer includes an accumulation layer and a conversion layer such that the conversion layer turns interactions therewith into charge which is accumulated in the accumulation layer, wherein the conversion layer converts incident radiation into charge, the radiation including at least one of alpha particles, beta particles, protons, neutrons, and electromagnetic radiation.