INTEGRATED CIRCUIT PACKAGING SYSTEM WITH ROUTABLE GRID ARRAY LEAD FRAME
System and method of manufacturing an integrated circuit packaging system using routable grid array lead frame. Method includes providing a lead frame having top metal connector and bottom contact, and treating the top metal connector with an additive, or the bottom contact with an additive, or both. Concomitant to the treatment process, insulation cover or bottom encapsulation can be formed about the top metal connector or the bottom contact with respective openings. Upon coupling the interconnects to the lead frame the interconnects do not exceed the metal contacts by more than about 60% due to the treatment process.
1 . A method comprising:
(a) providing a lead frame having a top metal connector and a bottom cover;
(b) treating the top metal connector with an additive;
(c) concomitant to the treating step (b), forming an insulation cover on the lead frame having a connection opening exposing the top metal connector; and
(d) connecting an internal interconnect to the top metal connector through the connection opening, wherein the internal interconnect does not exceed the top metal connector by about 60%.
2 . The method of claim 1 , wherein the providing step (a) includes the top metal connector having at least one of following compositions: Ni, Cu, Ni/Cu, Ni/Au/Cu, Ni/Pd/Cu, Ni/Pd/Au/Cu, Ni/Au/Pd/Cu, Ni/Ag/Cu and Ag/Cu.
3 . The method of claim 1 , wherein the providing step (a) includes the bottom cover having at least one of following compositions: Ni, Cu, Ni/Cu, Ni/Au/Cu, Ni/Pd/Cu, Ni/Pd/Au/Cu, Ni/Au/Pd/Cu, Ni/Ag/Cu and Ag/Cu.
4 . The method of claim 1 , wherein the treating step (b) includes the additive being an organic solderability preservative.
5 . The method of claim 1 , wherein the connecting step (d) includes the internal interconnect not exceeding the connection opening by about 50%.
6 . The method of claim 1 , wherein the connecting step (d) includes the internal interconnect not exceeding the connection opening by about 40%.
7 . A method comprising:
(a) providing a lead frame having a top metal connector and a bottom cover;
(b) treating the bottom cover with an additive;
(c) concomitant to the treating steps (b), forming a bottom encapsulation on the lead frame with the bottom cover exposed from the bottom encapsulation; and
(d) connecting an external interconnect to the bottom cover, wherein the external interconnect does not exceed the bottom cover by about 60%.
8 . The method of claim 7 , wherein the providing step (a) includes the top metal connector having at least one of following compositions: Ni, Cu, Ni/Cu, Ni/Au/Cu, Ni/Pd/Cu, Ni/Pd/Au/Cu, Ni/Au/Pd/Cu, Ni/Ag/Cu and Ag/Cu.
9 . The method of claim 7 , wherein the providing step (a) includes the bottom cover having at least one of following compositions: Ni, Cu, Ni/Cu, Ni/Au/Cu, Ni/Pd/Cu, Ni/Pd/Au/Cu, Ni/Au/Pd/Cu, Ni/Ag/Cu and Ag/Cu.
10 . The method of claim 7 , wherein the treating step (b) includes the additive being an organic solderability preservative.
11 . The method of claim 7 , wherein the connecting step (d) includes the external interconnect not exceeding the bottom cover by about 50%.
12 . The method of claim 7 , wherein the connecting step (d) includes the external interconnect not exceeding the bottom cover by about 40%.
13 . A method comprising:
(a) providing a lead frame having a top metal connector and a bottom cover;
(b) treating the top metal connector with a first additive and treating the bottom cover with a second additive;
(c) concomitant to the treating step (b), forming an insulation cover on the lead frame having a connection opening exposing the top metal connector and forming a bottom encapsulation on the lead frame with the bottom cover exposed from the bottom encapsulation; and
(d) connecting an internal interconnect to the top metal connector through the connection opening and an external interconnect to the bottom cover, wherein the internal interconnect does not exceed the top metal connector by about 60% and the external interconnect does not exceed the bottom cover by about 60%.
14 . The method of claim 13 , wherein the providing step (a) includes the top metal connector having at least one of following compositions: Ni, Cu, Ni/Cu, Ni/Au/Cu, Ni/Pd/Cu, Ni/Pd/Au/Cu, Ni/Au/Pd/Cu, Ni/Ag/Cu and Ag/Cu.
15 . The method of claim 13 , wherein the providing step (a) includes the bottom cover having at least one of following compositions: Ni, Cu, Ni/Cu, Ni/Au/Cu, Ni/Pd/Cu, Ni/Pd/Au/Cu, Ni/Au/Pd/Cu, Ni/Ag/Cu and Ag/Cu.
16 . The method of claim 13 , wherein the treating step (b) includes the first additive being an organic solderability preservative.
17 . The method of claim 13 , wherein the treating step (b) includes the second additive being an organic solderability preservative.
18 . The method of claim 13 , wherein the treating step (b) includes the first additive and the second additive being the same additive.
19 . The method of claim 13 , wherein the connecting step (d) includes the internal interconnect not exceeding the connection opening by about 50% and the external interconnect not exceeding the bottom cover by about 50%.
20 . The method of claim 13 , wherein the connecting step (d) includes the internal interconnect not exceeding the connection opening by about 40% and the external interconnect not exceeding the bottom cover by about 40%.