Select transistor tuning

1. A three dimensional charge-storage memory formed in multiple physical levels disposed above a substrate comprising:

a plurality of NAND strings that extend in a direction that is perpendicular to a surface of a substrate, each of the plurality of NAND strings having a select transistor at each end;

a plurality of select lines that are connected to gates of the select transistors to selectively connect the plurality of strings to conductive lines;

resolving circuits that are configured to resolve a threshold voltage of a sample select transistor; and

charge-changing circuits that are configured to apply conditions to the sample select transistor that are sufficient to change an amount of charge located in the sample select transistor and thereby change the threshold voltage of the sample select transistor to within a desired threshold voltage range that is confirmed by the resolving circuits, the charge-changing circuits further configured to subsequently apply the conditions to other select transistors without confirming by the resolving circuits that the other select transistors have threshold voltages within the desired threshold voltage range.

2. The three dimensional charge-storage memory of claim 1 wherein the charge-changing circuits include charge-increasing circuits that are configured to increase the amount of charge located in the select transistor and thereby increase the threshold voltage of the select transistor.

3. The three dimensional charge-storage memory of claim 1 wherein the charge-changing circuits include charge-decreasing circuits that are configured to decrease the amount of charge located in the select transistor and thereby decrease the threshold voltage of the select transistor.

4. The three dimensional charge-storage memory of claim 1 wherein the charge-changing circuits include charge-decreasing circuits that are configured to decrease the amount of charge located in the select transistor to an erased range and charge-increasing circuits that are configured to increase the amount of charge located in the select transistor from the erased range to a desired range.

5. The three dimensional charge-storage memory of claim 1 wherein each of the plurality of NAND strings includes memory cells that are used to store user data and dummy cells that are not used to store user data, and wherein the resolving circuits are configured to resolve a threshold voltage of a dummy cell and the charge-changing circuits are configured to change the amount of charge located in the dummy cell and thereby change the threshold voltage of the dummy cell to maintain the threshold voltage of the dummy cell in a desired range.

6. The three dimensional charge-storage memory of claim 1 wherein the conductive lines include bit lines connected to select transistors at one end of the plurality of NAND strings and source lines connected to select transistors at another end of the plurality of NAND strings.

7. The three dimensional charge-storage memory of claim 1 wherein changing the threshold voltage of an individual select transistor includes applying one or more pulses of programming voltage to a select line of the plurality of select lines that is connected to a select gate of the individual select transistor.

8. The three dimensional charge-storage memory of claim 1 wherein changing the threshold voltage of an individual select transistor includes applying an erase voltage to a select line of the plurality of select lines that is connected to a select gate of the individual select transistor.

9. The three dimensional charge-storage memory of claim 1 wherein the plurality of NAND strings include an individual NAND string having a source select transistor that connects the individual NAND string to a source terminal at a source end, a drain select transistor that connects the individual NAND string to a drain terminal at a drain end and a plurality of memory cells connected in series between the source select transistor and the drain select transistor, the plurality of select lines including a source select line connected to a select gate of the source select transistor and a drain select line connected to a select gate of the drain select transistor.

10. The three dimensional charge-storage memory of claim 9 wherein the individual NAND string is U-shaped with the source end and the drain end of the individual NAND string located on top of the individual NAND string.

11. The three dimensional charge-storage memory of claim 9 wherein the source end is located at a surface of the substrate and the drain end is located on top of the individual NAND string.

12. The three dimensional charge-storage memory of claim 9 wherein the plurality of memory cells have a channel formed in a memory hole that extends through the multiple physical levels.

13. The three dimensional charge-storage memory of claim 12 wherein the drain select transistor connects the channel to a bit line that extends over the NAND string.

14. The three dimensional charge-storage memory of claim 13 wherein the source select transistor connects the channel to a common source that extends under the NAND string.

15. The three dimensional charge-storage memory of claim 1 wherein the plurality of select lines include a sample select line, the charge-changing circuits configured to apply the conditions along all of the plurality of select lines except the sample select line without the confirming by the resolving circuits.

16. A three dimensional charge-storage memory formed in multiple physical levels disposed above a substrate comprising:

a plurality of NAND strings that extend in a direction that is perpendicular to a surface of a substrate, each of the plurality of NAND strings including memory cells used to store user data and dummy cells that are not used to store user data, and each of the plurality of NAND strings having a select transistor at each end;

a plurality of select lines that are connected to gates of the select transistors to control select transistors to selectively connect the plurality of strings to conductive lines;

resolving circuits that are configured to resolve threshold voltages of sample select transistors and to resolve threshold voltages of dummy cells; and

charge-changing circuits that are configured to apply conditions sufficient to change the amount of charge located in the sample select transistors and thereby change the threshold voltages of the sample select transistors to be within a desired threshold voltage range as confirmed by the resolving circuits, the charge-changing circuits further configured to apply the conditions to other select transistors without confirmation by the resolving circuits, and configured to change the amount of charge located in dummy cells and thereby change the threshold voltages of dummy cells.

17. The three dimensional charge-storage memory of claim 16 wherein the charge-changing circuits include charge-decreasing circuits to initially remove charge from select transistors and dummy cells, and charge-increasing circuits to subsequently add charge to select transistors and dummy cells.