Semiconductor device and method of forming base substrate with recesses for capturing bumped semiconductor die
A semiconductor device has a base substrate with recesses formed in a first surface of the base substrate. A first conductive layer is formed over the first surface and into the recesses. A second conductive layer is formed over a second surface of the base substrate. A first semiconductor die is mounted to the base substrate with bumps partially disposed within the recesses over the first conductive layer. A second semiconductor die is mounted to the first semiconductor die. Bond wires are formed between the second semiconductor die and the first conductive layer over the first surface of the base substrate. An encapsulant is deposited over the first and second semiconductor die and base substrate. A portion of the base substrate is removed from the second surface between the second conductive layer down to the recesses to form electrically isolated base leads for the bumps and bond wires.
1. A semiconductor device, comprising:
a base substrate including a plurality of first recesses formed in a first surface of the base substrate;
a first conductive layer formed over a second surface of the base substrate opposite the first recesses; and
a first semiconductor die disposed over the base substrate with a plurality of interconnect structures of the first semiconductor die disposed in the first recesses, wherein a portion of the base substrate within a footprint of the semiconductor die is separated through the second surface of the base substrate to form electrically isolated leads.
2. The semiconductor device of claim 1 , further including a second conductive layer formed in the first recesses.
3. The semiconductor device of claim 1 , further including:
a second semiconductor die disposed over the first semiconductor die; and
an encapsulant deposited over the first and second semiconductor die.
4. The semiconductor device of claim 1 , wherein a lateral spread of the interconnect structure is restricted by nature of the interconnect structure being disposed in the first recesses.
5. The semiconductor device of claim 1 , further including an underfill material deposited between the first semiconductor die and base substrate.
6. The semiconductor device of claim 1 , further including an encapsulant deposited over the first semiconductor die.
7. A semiconductor device, comprising:
a substrate;
a plurality of first recesses formed in a first surface of the substrate;
a plurality of second recesses formed in the first surface of the substrate and alternating with the first recesses;
a first semiconductor die disposed over the first surface of the substrate with a plurality of interconnect structures of the first semiconductor die disposed within the first recesses; and
a plurality of third recesses formed through a second surface of the substrate opposite the first surface of the substrate and aligned with the second recesses.
8. The semiconductor device of claim 7 , further including a conductive layer formed over the second surface of the substrate.
9. The semiconductor device of claim 7 , further including a conductive layer formed in the first recesses.
10. The semiconductor device of claim 7 , wherein a lateral spread of the interconnect structure is restricted by nature of the interconnect structure being disposed in the first recesses.
11. The semiconductor device of claim 7 , further including:
a second semiconductor die disposed over the first semiconductor die; and
an encapsulant deposited over the first and second semiconductor die.
12. A semiconductor device, comprising:
a substrate including a plurality of first recesses formed in a first surface of the substrate; and
a first semiconductor die disposed over the substrate with a plurality of interconnect structures disposed only in alternating first recesses.
13. The semiconductor device of claim 12 , further including a conductive layer formed over a second surface of the substrate.
14. The semiconductor device of claim 12 , further including a conductive layer formed in the first recesses.
15. The semiconductor device of claim 12 , further including:
a second semiconductor die disposed over the first semiconductor die; and
an encapsulant deposited over the first and second semiconductor die.
16. The semiconductor device of claim 12 , wherein a lateral spread of the interconnect structure is restricted by nature of the interconnect structure being disposed in the first recesses.
17. A semiconductor device, comprising:
a first electrically isolated lead including a first recess;
a second electrically isolated lead including a second recess;
a first semiconductor die disposed over the first and second electrically isolated leads;
a first interconnect structure of the first semiconductor die disposed in the first recess of the first electrically isolated lead; and
a second interconnect structure of the first semiconductor die disposed in the second recess of the second electrically isolated lead.
18. The semiconductor device of claim 17 , further including a conductive layer formed in the first and second recesses.
19. The semiconductor device of claim 17 , further including:
a second semiconductor die disposed over the first semiconductor die; and
an encapsulant deposited over the first and second semiconductor die.
20. The semiconductor device of claim 17 , wherein a lateral spread of the first interconnect structure is restricted by nature of the first interconnect structure being disposed in the first recess.
21. The semiconductor device of claim 17 , further including an underfill material deposited between the first semiconductor die and first and second electrically isolated leads.
22. The semiconductor device of claim 17 , further including an encapsulant deposited over the first semiconductor die.