Semiconductor Device and Method of Forming Protective Coating Material Over Semiconductor Wafer to Reduce Lamination Tape Residue
A semiconductor device has a build-up interconnect structure formed over an active surface of a semiconductor wafer containing a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the interconnect structure. Bumps are formed over the interconnect structure. A protective coating material is deposited over the insulating layer and saw street. A lamination tape is applied over the coating material. A portion of a back surface of the semiconductor wafer is removed. A mounting tape is applied over the back surface. The lamination tape is removed while leaving the coating material over the insulating layer and saw street. A first channel is formed through the saw street extending partially through the semiconductor wafer. The coating material is removed after forming the first channel. A second channel is formed through the saw street and the mounting tape is removed to singulate the semiconductor wafer.
1 . A semiconductor device, comprising:
a semiconductor wafer;
an interconnect structure formed over a first surface of the semiconductor wafer;
an insulating layer formed over the interconnect structure; and
a protective material deposited over the interconnect structure and insulating layer.
2 . The semiconductor device of claim 1 , further including a channel extending partially through the semiconductor wafer.
3 . The semiconductor device of claim 2 , wherein the channel is formed through the semiconductor wafer using a laser.
4 . The semiconductor device of claim 1 , wherein the protective material includes a water-soluble material.
5 . The semiconductor device of claim 1 , further including a plurality of bumps formed over the interconnect structure.
6 . The semiconductor device of claim 1 , further including a lamination tape applied over the protective material.
7 . A semiconductor device, comprising:
a semiconductor wafer;
a protective material deposited over a first surface of the semiconductor wafer; and
a first lamination tape applied over the protective material.
8 . The semiconductor device of claim 7 , further including a first channel extending partially through the semiconductor wafer.
9 . The semiconductor device of claim 8 , further including a second channel extending completely through the semiconductor wafer.
10 . The semiconductor device of claim 7 , wherein the protective material includes a water-soluble material.
11 . The semiconductor device of claim 7 , further including an interconnect structure formed over the first surface of the semiconductor wafer.
12 . The semiconductor device of claim 11 , further including a plurality of bumps formed over the interconnect structure.
13 . The semiconductor device of claim 7 , further including a second lamination tape applied over a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer.
14 . A semiconductor device, comprising:
a semiconductor die;
an interconnect structure formed over a first surface of the semiconductor die; and
a protective material deposited over the interconnect structure.
15 . The semiconductor device of claim 14 , further including a first channel extending partially through the semiconductor wafer.
16 . The semiconductor device of claim 15 , further including a second channel extending completely through the semiconductor wafer.
17 . The semiconductor device of claim 15 , wherein the first channel is formed through the semiconductor die using a laser.
18 . The semiconductor device of claim 14 , wherein the protective material includes a water-soluble material.
19 . The semiconductor device of claim 14 , further including a plurality of bumps formed over the interconnect structure.
20 . The semiconductor device of claim 14 , further including a lamination tape applied over the protective material.
21 . A semiconductor device, comprising:
a semiconductor die;
a protective material deposited over a first surface of the semiconductor die; and
a first lamination tape applied over the protective material.
22 . The semiconductor device of claim 21 , further including a channel extending partially through the semiconductor die.
23 . The semiconductor device of claim 21 , wherein the protective material includes a water-soluble material.
24 . The semiconductor device of claim 21 , further including an interconnect structure formed over the first surface of the semiconductor die.
25 . The semiconductor device of claim 21 , further including a second lamination tape applied over a second surface of the semiconductor die opposite the first surface of the semiconductor die.