Semiconductor Device and Method of Forming Interposer with Opening to Contain Semiconductor Die
A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.
1 . A method of making a semiconductor device, comprising:
providing a carrier;
forming an interface layer over the carrier;
disposing a first substrate over the carrier;
disposing a second substrate over the carrier;
disposing a first semiconductor die over the first and second substrates electrically connected to the first and second substrates;
depositing an encapsulant over the first semiconductor die and over the first and second substrates; and
removing the carrier and interface layer.
2 . The method of claim 1 , further including forming a plurality of bumps over the first and second substrates.
3 . The method of claim 1 , wherein disposing the first and second substrates includes simultaneously disposing the first and second substrates over the carrier.
4 . The method of claim 1 , further including forming an electrical connection between the first and second substrates.
5 . The method of claim 1 , further including forming an interconnect structure over a surface of the first substrate opposite the first semiconductor die.
6 . The method of claim 1 , further including disposing a second semiconductor die over the first substrate.
7 . A method of making a semiconductor device, comprising:
providing a first substrate;
disposing a second substrate adjacent to the first substrate;
disposing a first semiconductor die over the first substrate electrically connected to the first substrate; and
depositing an encapsulant over the first semiconductor die and over the first and second substrates.
8 . The method of claim 7 , further including forming a bump between the first semiconductor die and first substrate.
9 . The method of claim 7 , further including disposing a passive component over the first or second substrate.
10 . The method of claim 7 , further including forming an interconnect structure over a surface of the first substrate opposite the first semiconductor die.
11 . The method of claim 7 , further including forming an electrical connection between the first and second substrates.
12 . The method of claim 7 , further including forming a bump over a surface of the first substrate opposite the first semiconductor die.
13 . The method of claim 7 , further including disposing a second semiconductor die over the first semiconductor die.
14 . A semiconductor device, comprising:
a first substrate;
a second substrate;
a first semiconductor die disposed over the first and second substrates; and
an encapsulant deposited over the first semiconductor die and over the first and second substrates.
15 . The semiconductor device of claim 14 , further including a bump formed between the first semiconductor die and the second substrate.
16 . The semiconductor device of claim 14 , wherein the first substrate includes a laminate interposer.
17 . The semiconductor device of claim 14 , wherein the first substrate includes a coefficient of thermal expansion (CTE) similar to a CTE of the semiconductor die.
18 . The semiconductor device of claim 14 , wherein the first semiconductor die includes a ball grid array.
19 . The semiconductor device of claim 14 , further including a second semiconductor die disposed over the first substrate.
20 . A semiconductor device, comprising:
a first substrate;
a second substrate; and
a first semiconductor die disposed over the first and second substrates and electrically connected to the first and second substrates.
21 . The semiconductor device of claim 20 , further including a second semiconductor die disposed over the first substrate.
22 . The semiconductor device of claim 20 , wherein the first substrate includes a laminate interposer.
23 . The semiconductor device of claim 20 , wherein the second substrate includes an insulating layer and a conductive layer.
24 . The semiconductor device of claim 20 , wherein the first substrate includes a coefficient of thermal expansion (CTE) similar to a CTE of the semiconductor die.
25 . The semiconductor device of claim 20 , further including a passive component disposed over the first substrate.