Granted Patent B2

US 9,159,696 · App. 14/026,158 · Granted Oct 13, 2015

Inventors: Timothy H. Daubenspeck (Colchester, VT); Jeffrey P. Gambino (Westford, VT); Ekta Misra (Fishkill, NY); Christopher D. Muzzy (Burlington, VT); Wolfgang Sauter (Richmond, VT)

Assignee: GLOBALFOUNDRIES, INC.

H01L24/81H01L24/11

Abstract

Claims (59)

1. A method of fabricating a solder bump connection, the method comprising:

forming a passivation layer on a dielectric layer;

forming a via opening extending through the passivation layer from a top surface of the passivation layer to a metal line in the dielectric layer;

forming a seed layer covering the via opening, the metal line, and the top surface of the passivation layer;

after the seed layer is formed, forming a mask on the top surface of the passivation layer and having a mask opening aligned with the via opening;

selectively forming a conductive layer in the via opening and the mask opening that projects above the top surface of the passivation layer; and

planarizing the passivation layer and the conductive layer to define a plug in the via opening that is coupled with the metal line,

wherein the seed layer is configured to promote formation of a conductor that comprises the conductive layer, the mask opening is larger than the via opening, and seed layer is exposed within the mask opening and the via opening.

2. The method of claim 1 wherein the mask covers the seed layer on the top surface of the passivation layer outside of the mask opening when the conductive layer is selectively formed in the via opening and the mask opening.

3. The method of claim 2 further comprising:

before the seed layer is formed, forming an adhesion layer covering the via opening, the metal line, and the top surface of the passivation layer.

4. The method of claim 3 wherein the conductive layer includes sections that overlap the top surface of the passivation layer within the mask opening, and planarizing the passivation layer and the conductive layer comprises:

removing the sections of the conductive layer that project above the top surface of the passivation layer; and

removing the seed layer and the adhesion layer from the top surface of the passivation layer.

5. The method of claim 2 wherein selectively forming the conductive layer in the via opening and the mask opening comprises:

electrodepositing the conductive layer on the seed layer exposed within the mask opening and the via opening.

6. The method of claim 1 wherein the crackstop opening and the via opening are concurrently formed in the passivation layer, and further comprising:

forming a passivation layer on a dielectric layer;

forming a via opening extending though the passivation layer from a top surface of the passivation layer to a metal line in the dielectric layer;

forming a crackstop opening extending though the passivation layer;

forming a mask on the top surface of the passivation layer and having a mask opening aligned with the via opening;

forming a seed layer covering the crackstop opening, the via opening, the metal line, and the top surface of the passivation layer

after the seed layer is formed, selectively forming a conductive later in the via opening and the mask opening that projects above the top surface of the passivation layer; and

planarizing the passivation layer and the conductive layer to define a plug in the via opening that is coupled with the metal line,

wherein the seed layer is configured to promote formation of a conductor that comprises the conductive layer.

7. The method of claim 6 wherein the mask covers the seed layer on the passivation layer and the seed layer in the crackstop opening when the conductive layer is selectively formed in the via opening and the mask opening, and further comprising:

after the conductive layer is selectively formed in the via opening, removing the seed layer from the crackstop opening.

8. The method of claim 1 further comprising:

before the passivation layer and the conductive layer are planarized, removing the mask from the top surface of the passivation layer.

9. The method of claim 1 further comprising:

forming a solder bump that is coupled with the metal line by the plug.

10. The method of claim 1 wherein selectively forming the conductive layer in the via opening and the mask opening comprises:

depositing the conductive layer only within the via opening and the mask opening.

11. The method of claim 1 wherein selectively forming the conductive layer in the via opening and the mask opening comprises:

electrodepositing a conductor within the via opening and the mask opening to selectively form the conductive layer.

12. The method of claim 11 wherein the conductive layer has a first thickness greater than a second thickness of the passivation layer before the passivation layer and the conductive layer are planarized.

13. The method of claim 12 wherein planarizing the passivation layer and the conductive layer comprises:

chemical-mechanical polishing the passivation layer and the conductive layer to reduce the first thickness of the conductive layer to be equal to the second thickness of the passivation layer and to remove sections of the conductive layer that overlap the top surface of the passivation layer within the mask opening.

14. The method of claim 1 wherein the passivation layer is comprised of an organic material, and planarizing the passivation layer and the conductive layer comprises:

chemical-mechanical polishing the passivation layer and the plug,

wherein the organic material of the passivation layer is free of surface damage after the passivation layer and the conductive layer are planarized.

15. A method of fabricating a solder bump connection, the method comprising:

forming a passivation layer on a dielectic layer;

forming a via opening extending through the passivation layer from a top surface of the passivation layer to a metal line in the dielectric layer;

forming a seed layer covering the via opening, the metal line, and top surface of the passivation layer;

after the seed layer is formed, forming a mask on the top surface of the passivation layer and having a mask opening aligned with the via opening;

selectively forming a conductive layer in the via opening and the mask opening that projects above the top surface of the passivation layer; and

planarizing the passivation layer and the conductive layer to define a plug in the via opening that is coupled with the metal line,

wherein the seed layer is configured to promote formation of a conductor that comprises the conductive layer, and the seed layer is exposed within the mask opening and the via opening.

16. The method of claim 15 wherein the mask covers the seed layer on the top surface of the passivation layer outside of the mask opening when the conductive layer is selectively formed in the via opening and the mask opening.

17. The method of claim 16 further comprising:

before the seed layer is formed, forming an adhesion layer covering the via opening, the metal line, and top surface of the passivation layer.

18. The method of claim 17 wherein the conductive layer includes sections that overlap the top surface of the passivation layer within the mask opening, and planarizing the passivation layer and the conductive layer comprises:

removing the sections of the conductive layer that project above the top surface of the passivation layer; and

removing the seed layer and the adhesion layer from the top surface of the passivation layer.

19. The method of claim 16 wherein selectively forming the conductive layer in the via opening and the mask opening comprises:

electrodepositing the conductive layer on the seed layer exposed within the mask opening and the via opening.

20. The method of claim 15 further comprising:

before the passivation layer and the conductive layer are planarized, removing the mask from the top surface of the passivation layer.

Assignments (9)

Continuity (1)