Dielectric cover for a through silicon via

1. A method for forming a dielectric layer over a void area of a topographical semiconductor feature, the method comprising:

determining a location of a void area of the topographical semiconductor feature;

depositing, on a first dielectric layer and a top surface of a topographical semiconductor feature, a second dielectric layer;

patterning one or more portions of the second dielectric layer, wherein at least one portion of the patterned second dielectric layer is over the location of the void area of the topographical semiconductor feature;

depositing a first metal layer over the second dielectric layer, at least one portion of the first dielectric layer, and a portion of the top surface of the topographical semiconductor feature; and

performing a chemical mechanical polish of the first metal layer, wherein the chemical mechanical polish reaches the top surface of at least one of the one or more portions of the second dielectric layer.

2. The method of claim 1 , wherein patterning the one or more portions of the second dielectric layer includes forming a first thickness for a first one of the one or more portions, and a second thickness for a second one of the one or more portions using at least one of a halftone mask process, a dual damascene process, and an etching process.

3. The method of claim 2 , wherein the dielectric layer over the location of the void area is formed from the first one of the one or more portions of the second dielectric layer, wherein the first thickness is less than the second thickness.

4. The method of claim 1 , further comprises forming the dielectric layer over the location of the void area on both ends of topographical semiconductor feature which is a TSV.

5. The method of claim 1 , wherein the chemical mechanical polish of the first metal layer is performed to the top surface of the second one of the one or more portions, and wherein the second thickness is greater than the first thickness.

6. The method of claim 1 , wherein the at least one portion of the patterned second dielectric layer over the void area of the topographical semiconductor feature which is a TSV is patterned to be one μm to four μm wide.

7. The method of claim 1 , wherein the patterned second dielectric layer covering the void area of the topographical semiconductor feature forms a plug over a void in the topographical semiconductor feature.

8. The method of claim 1 , wherein depositing the first metal layer over the second dielectric layer further comprises:

depositing a metal liner layer; and

depositing a metal material metal layer.

9. The method of claim 1 , further comprises:

forming from the first metal layer, a metal pad connecting an array of multiple topographical semiconductor features wherein the topographical semiconductor features are multiple TSV; and

using the patterned second dielectric layer covering the least one portion of the first dielectric layer to form one or more holes of an array of holes in the metal pad.

10. The method of claim 9 , further comprises determining a location for each of the one or more holes in the array of holes by one or more of the following: mechanical modelling of stress in the metal pad, empirical data gathered through process experimentation of stresses in the metal pad, or designer determination of approximate uniform spacing of each of the one or more holes in the array of holes in the metal pad.

11. The method of claim 9 , wherein the one or more holes are filled with a dielectric material.