Memory system and method for selecting memory dies to perform memory access operations in based on memory die temperatures
View Patent ↗A memory system and method are provided for selecting memory dies for memory access operations based on memory die temperatures. The memory system has a plurality of memory dies, where each memory die has its own temperature sensor. In one embodiment, the memory system selects which memory dies to perform memory access operations in based on the temperatures of the memory dies. In another embodiment, a controller of the memory system selects which memory dies to thermal throttle memory access operations in based on the detected temperatures. In yet another embodiment, a temperature-aware media management layer module of the memory 1 system routes a memory access operation from a first memory die to a second memory die based on the temperatures of the memory dies.
1. A method for selecting memory dies for performing memory access operations in based on memory die temperatures, the method comprising:
performing the following in a memory system comprising a plurality of memory dies, each memory die having its own temperature sensor:
monitoring temperatures of the memory dies sensed by the temperature sensors;
selecting which memory dies to perform memory access operations in based on the temperatures of the memory dies; and
performing memory access operations in the selected memory dies.
2. The method of claim 1 , wherein the selected memory dies are those memory dies that have not reached a maximum temperature limit.
3. The method of claim 1 , wherein each memory die is assigned a weight based on the temperature of the memory die, and wherein the memory dies are selected based on the assigned weights.
4. The method of claim 1 , wherein the memory dies are selected based on an average temperature of each memory die over time.
5. The method of claim 1 , wherein, in addition to the temperatures of the memory dies, one or more of the following considerations are used in selecting the memory dies: performance considerations, wear leveling considerations, and memory die availability.
6. The method of claim 1 further comprising:
relocating frequently-accessed data from a relatively-warmer memory die to a relatively-colder memory die; and
relocating infrequently-accessed data from the relatively-colder memory die to the relatively-warmer memory die.
7. The method of claim 1 further comprising:
enlarging overprovisioning of a relatively-warmer memory die by relocating frequently-accessed data from the relatively-warmer memory die to a relatively-colder memory die without relocating data from the relatively-colder memory die to the relatively-warmer memory die.
8. The method of claim 1 further comprising:
enlarging overprovisioning of a relatively-colder memory die by relocating frequently-accessed data from the relatively-colder memory die to a relatively-warmer memory die without relocating data from the relatively-warmer memory die to the relatively-colder memory die.
9. The method of claim 1 , wherein at least one memory die has a built-in temperature sensor.
10. The method of claim 1 , wherein at least one memory die has an external temperature sensor.
11. The method of claim 1 , wherein the memory access operations comprise write operations.
12. The method of claim 1 , wherein the memory access operations comprise read operations.
13. The method of claim 1 , wherein the memory access operations comprise write and read operations.
14. The method of claim 1 , wherein at least one memory die is a three-dimensional memory.
15. A memory system comprising:
a plurality of memory dies, each memory die having its own temperature sensor; and
a controller in communication with the plurality of memory dies, wherein the controller is configured to:
detect temperatures of the memory dies sensed by the temperature sensors;
select which memory dies to thermal throttle memory access operations in based on the detected temperatures; and
thermal throttle memory access operations only in the selected memory dies;
wherein each memory die is assigned a weight based on the temperature of the memory die, and wherein the controller is further configured to select the memory dies by comparing the assigned weights to a threshold temperature.
16. The memory system of claim 15 , wherein the selected memory dies are those memory dies that have reached a maximum temperature limit.
17. The memory system of claim 15 , wherein the controller is further configured to select the memory dies by comparing an average temperature of each memory die over time to a threshold temperature.
18. The memory system of claim 15 , wherein in selecting the memory dies, the controller is further configured to consider one or more of the following: performance considerations, wear leveling considerations, and memory die availability.
19. The memory system of claim 15 , wherein the controller is further configured to:
relocate frequently-accessed data from a relatively-warmer memory die to a relatively-colder memory die; and
relocate infrequently-accessed data from the relatively-colder memory die to the relatively-warmer memory die.
20. The memory system of claim 15 , wherein the controller is further configured to:
enlarge overprovisioning of a relatively-warmer memory die by relocating frequently-accessed data from the relatively-warmer memory die to a relatively-colder memory die without relocating data from the relatively-colder memory die to the relatively-warmer memory die.
21. The memory system of claim 15 , wherein the controller is further configured to:
enlarge overprovisioning of a relatively-colder memory die by relocating frequently-accessed data from the relatively-colder memory die to a relatively-warmer memory die without relocating data from the relatively-warmer memory die to the relatively-colder memory die.
22. The memory system of claim 15 , wherein at least one memory die has a built-in temperature sensor.
23. The memory system of claim 15 , wherein at least one memory die has an external temperature sensor.
24. The memory system of claim 15 , wherein the memory access operations comprise write operations.
25. The memory system of claim 15 , wherein the memory access operations comprise read operations.
26. The memory system of claim 15 , wherein the memory access operations comprise write and read operations.
27. The memory system of claim 15 , wherein at least one memory die is a three-dimensional memory.
28. A memory system comprising:
a plurality of memory dies, each memory die having its own temperature sensor; and
a temperature-aware media management layer module in communication with the plurality of memory dies, wherein the temperature-aware media management layer module is configured to:
receive temperature information from the temperature sensors of the plurality of memory dies; and
route a memory access operation from a first memory die to a second memory die based on the received temperatures;
wherein each memory die is assigned a weight based on the temperature of the memory die, and wherein the temperature-aware media management layer module is configured to route the memory access operation based on the assigned weights of the first and second memory dies.
29. The memory system of claim 28 , wherein the temperature-aware media management layer module is configured to route the memory access operation in response to the first memory die reaching a maximum temperature limit.
30. The memory system of claim 28 , wherein the temperature-aware media management layer module is configured to route the memory access operation based on an average temperature of the first and second memory dies over time.
31. The memory system of claim 28 , wherein, in addition to the temperatures of the memory dies, the temperature-aware media management layer module is configured to route the memory access operation based on one or more of the following considerations: performance considerations, wear leveling considerations, and memory die availability.
32. The memory system of claim 28 , wherein the temperature-aware media management layer module is further configured to:
relocate frequently-accessed data from a relatively-warmer memory die to a relatively-colder memory die; and
relocate infrequently-accessed data from the relatively-colder memory die to the relatively-warmer memory die.
33. The memory system of claim 28 , wherein the temperature-aware media management layer module is further configured to:
enlarge overprovisioning of a relatively-warmer memory die by relocating frequently-accessed data from the relatively-warmer memory die to a relatively-colder memory die without relocating data from the relatively-colder memory die to the relatively-warmer memory die.
34. The memory system of claim 28 , wherein the temperature-aware media management layer module is further configured to:
enlarge overprovisioning of a relatively-colder memory die by relocating frequently-accessed data from the relatively-colder memory die to a relatively-warmer memory die without relocating data from the relatively-warmer memory die to the relatively-colder memory die.
35. The memory system of claim 28 , wherein at least one memory die has a built-in temperature sensor.
36. The memory system of claim 28 , wherein at least one memory die has an external temperature sensor.
37. The memory system of claim 28 , wherein the memory access operation comprises a write operation.
38. The memory system of claim 28 , wherein the memory access operation comprises a read operation.
39. The memory system of claim 28 , wherein at least one memory die is a three-dimensional memory.