Adaptive multi-page programming methods and apparatus for non-volatile memory

1. A method comprising:

performing one programming pass of a multi-pass programming operation of a memory cell by applying a set of program pulses to the memory cell;

determining a number of program pulses applied to the memory cell during the one programming pass;

determining that the memory cell is a slow-to-program memory cell by determining that a difference between the determined number of program pulses and a predetermined number of program pulses exceeds a first predetermined threshold;

and

performing another programming pass on the memory cell by applying a set of adjusted program pulses to the memory cell, wherein the adjusted program pulses comprise a parameter that is adjusted based on the difference to reduce a number of adjusted program pulses applied to the memory cell during the another programming pass.

2. The method of claim 1 , further comprising programming the memory cell to a predetermined programming state during the one programming pass.

3. The method of claim 2 , wherein the predetermined number of program pulses comprises an average number of program pulses required to program a plurality of memory cells to the predetermined programming state.

4. The method of claim 2 , wherein the predetermined number of program pulses comprises a user-specified value.

5. The method of claim 1 , wherein the set of adjusted program pulses comprises one or more user-specified adjusted program pulses.

6. The method of claim 1 , wherein the adjusted parameter comprises an amplitude of one or more program pulses.

7. The method of claim 6 , wherein the amplitude of the one or more program pulses is adjusted based the determined difference.

8. The method of claim 1 , wherein the set of adjusted program pulses comprises one or more user-specified adjusted program pulses.

9. The method of claim 8 , wherein the pulse width of the one or more program pulses is adjusted based the determined difference.

10. The method of claim 1 , wherein the one programming pass is a first programming pass of the multi-pass programming operation, and the another programming pass is a second programming pass of the multi-pass programming operation.

11. The method of claim 1 , wherein the one programming pass is a second programming pass of the multi-pass programming operation and the another programming pass is a third programming pass of the multi-pass programming operation.

12. A device comprising:

a memory cell; and

a control circuit configured to:

perform one programming pass of a multi-pass programming operation of the memory cell a by applying set of program pulses to the memory cell;

determine a number of the program pulses applied to the memory cell during the one programming pass;

determine a difference between the determined number of program pulses and a predetermined number of program pulses;

and

perform another programming pass on the memory cell by applying set of adjusted program pulses to the memory cell, wherein the adjusted program pulses comprise a parameter that is adjusted based on the difference to reduce or increase a number of adjusted program pulses applied to the memory cell during the another programming pass.

13. The memory device of claim 12 , wherein the control circuit programs the memory cell to a predetermined programming state during the one programming pass.

14. The memory device of claim 13 , wherein the control circuit calculates the predetermined number of program pulses by averaging a number of program pulses required to program a plurality of memory cells to the predetermined programming state.

15. The memory device of claim 12 , wherein the control circuit adjusts an amplitude of one or more program pulses of the adjusted program pulses.

16. The memory device of claim 12 , wherein the control circuit adjusts a pulse width of one or more program pulses of the adjusted program pulses.

17. A method comprising:

performing one programming pass of a multi-pass programming operation of a memory cell by applying first program pulses to the memory cell;

determining a number of the first program pulses applied to the memory cell during the one programming pass;

determining that the memory cell is a slow-to-program memory cell or a fast-to-program memory cell by:

determining a first difference between the determined number of first program pulses applied to the memory cell during the one programming pass and a predetermined number of program pulses; and

determining a second difference between the predetermined number of program pulses and the determined number of first program pulses applied to the memory cell during the one programming pass;

and

performing the another programming pass of the memory cell by applying second program pulses to the memory cell, wherein the second program pulses comprise a pulse amplitude that is adjusted based on one of the determined first difference and the determined second difference.

18. The method of claim 17 , further comprising programming the memory cell to a predetermined programming state during the one programming pass.

19. The method of claim 18 , wherein the predetermined number of program pulses comprises an average number of program pulses required to program a plurality of memory cells to the predetermined programming state.

20. The method of claim 18 , wherein the predetermined number of first program pulses comprises a user-specified value.

21. The method of claim 17 , wherein the one programming pass is a first programming pass of the multi-pass programming operation, and the another programming pass is a second programming pass of the multi-pass programming operation.

22. The method of claim 17 , wherein the one programming pass is a second programming pass of the multi-pass programming operation and the another programming pass is a third programming pass of the multi-pass programming operation.