Thermal hot spot cooling for semiconductor devices
A semiconductor device package which includes a semiconductor package, a semiconductor device joined to the semiconductor package; and a lid to be placed over the semiconductor device and joined to the semiconductor package. The lid includes: a block of a first material having a first surface and a second surface, the second surface facing the semiconductor device, the block having perforations extending between the first surface and the second surface; inserts for filling the perforations, each of the inserts being made of a second material, at least one of the inserts protrudes beyond the second surface towards the semiconductor device; and a bonding material to bond the inserts to the block so that the at least one of the inserts protrudes beyond the second surface towards the semiconductor device. Also included is a method of assembling a semiconductor device package.
1. A semiconductor device package comprising:
a semiconductor package;
a semiconductor device joined to the semiconductor package; and
a lid to be placed over the semiconductor device and joined to the semiconductor package, the lid comprising:
a block of a first material having a first surface and a second surface, the second surface facing the semiconductor device, the block having a plurality of perforations extending between the first surface and the second surface;
a plurality of inserts for filling the perforations, each of the inserts being made of a second material, at least one of the plurality of inserts protrudes beyond the second surface towards the semiconductor device; and
a bonding material to bond the plurality of inserts to the block so that the at least one of the plurality of inserts protrudes beyond the second surface towards the semiconductor device.
2. The semiconductor device package of claim 1 wherein the bonding material is a solder.
3. The semiconductor device package of claim 1 wherein the bonding material is an adhesive.
4. The semiconductor device package of claim 1 wherein the second material being different than the first material and the second material having a higher thermal conductivity than the first material.
5. The semiconductor device package of claim 1 wherein the second material is the same as the first material.
6. The semiconductor device package of claim 1 wherein the plurality of inserts are made of a material selected from the group consisting of graphite, copper and CVD diamond.
7. The semiconductor device package of claim 6 wherein the plurality of inserts are either graphite or CVD diamond and are coated with a material selected from the group consisting of nickel, chrome and gold.
8. The semiconductor device package of claim 1 further comprising a thermal interface material between the lid and the semiconductor device wherein the at least one of the plurality of inserts that protrudes beyond the second surface reduces a bondline thickness of the thermal interface material between the at least one of the plurality of inserts and the semiconductor device as compared to a bondline thickness of the thermal interface material away from the at least one of the plurality of inserts.
9. The semiconductor device package of claim 8 wherein there is a second insert of the plurality of inserts that protrudes beyond the second surface so as to reduce a bondline thickness of the thermal interface material between the second insert of the plurality of inserts and the semiconductor device as compared to a bondline thickness of the thermal interface material away from the second insert of the plurality of inserts such that the one insert and the second insert protrude by different amounts beyond the second surface but reduce the bondline thickness of the thermal interface material between the one insert and the semiconductor device and the bondline thickness of the thermal interface material between the second insert and the semiconductor device by the same amount.
10. A lid for a semiconductor device package comprising:
a block of a first material having a first surface and a second surface, the second surface facing a semiconductor device, the block having a plurality of perforations extending between the first surface and the second surface;
a plurality of inserts for filling the perforations, each of the inserts being made of a second material, at least one of the plurality of inserts protruding beyond the second surface; and
a bonding material to bond the plurality of inserts to the block so that the at least one of the plurality of inserts protrudes beyond the second surface towards the semiconductor device.
11. The lid of claim 10 wherein the bonding material is a solder.
12. The lid of claim 10 wherein the bonding material is an adhesive.
13. The lid of claim 10 wherein the second material being different than the first material and the second material having a higher thermal conductivity than the first material.
14. The lid of claim 10 wherein the second material is the same as the first material.
15. The lid of claim 10 wherein the plurality of inserts are made of a material selected from the group consisting of graphite, copper and CVD diamond.
16. The lid of claim 15 wherein the plurality of inserts are graphite or CVD diamond and are coated with a material selected from the group consisting of nickel, chrome and gold.
17. A method of assembling a semiconductor device package comprising:
obtaining a semiconductor package having a semiconductor device joined to the semiconductor package;
obtaining a lid for the semiconductor device package comprising a block of a first material having a first surface and a second surface, the second surface facing the semiconductor device, the block having a plurality of perforations extending between the first surface and the second surface;
positioning the lid on the semiconductor device and the semiconductor package;
inserting a plurality of inserts into the perforations, each of the inserts being made of a second material, at least one of the plurality of inserts protrudes beyond the second surface so as to contact the semiconductor device;
applying a bonding material to bond the plurality of inserts to the lid;
applying a force to the lid and the at least one of the plurality of inserts so that the at least one insert maintains contact with the semiconductor device while the bonding material hardens;
removing the force and separating the lid from the semiconductor device;
applying a thermal interface material to the lid or the semiconductor device;
positioning the lid on the semiconductor device and the semiconductor package;
applying an adhesive material between the lid and the semiconductor package;
applying a force to the lid to force the at least one of the plurality of inserts into the thermal interface material; and
curing the adhesive material between the lid and the semiconductor package.
18. The method of claim 17 wherein the at least one of the plurality of inserts that protrudes beyond the second surface reduces a bondline thickness of the thermal interface material between the at least one of the plurality of inserts and the semiconductor device as compared to a bondline thickness of the thermal interface material away from the at least one of the plurality of inserts.
19. The method of claim 18 wherein there is a second insert of the plurality of inserts that protrudes beyond the second surface so as to reduce a bondline thickness of the thermal interface material between the second insert of the plurality of inserts and the semiconductor device as compared to a bondline thickness of the thermal interface material away from the second insert of the plurality of inserts such that the one insert and the second insert protrude by different amounts beyond the second surface but reduce the bondline thickness between the one insert and the semiconductor device and the bondline thickness of the thermal interface material between the second insert and the semiconductor device by the same amount.
20. The method of claim 17 wherein the plurality of inserts are made of a material selected from the group consisting of graphite, copper and CVD diamond.