Microelectronic assembly having a heat spreader for a plurality of die
A method of manufacturing a microelectronic assembly ( 100 ) and a microelectronic device ( 4100 ) that include a stacked structure ( 101 ). The stacked structure includes a heat spreader ( 104 ), at least one die ( 106 ) thermally coupled to at least a portion of one side of the heat spreader, at least one other die ( 108 ) thermal coupled to at least a portion of an opposite side of the heat spreader, at least one opening ( 401 ) in the heat spreader located in a region of between the two die, an insulator ( 603 ) disposed in the at least one opening, and electrically conductive material ( 1308, 1406 ) in an insulated hole ( 705 ) in the insulator. The heat spreader allows electrical communication between the two die through the opening while the insulator isolates the electrically conductive material and the heat spreader from each other.
1. A method of manufacturing a microelectronic device, comprising:
providing a heat spreader having a first major surface and a second major surface opposite the first major surface, wherein the heat spreader has an opening, an insulator in the opening, an electrically insulated through hole in the insulator, and electrically conductive material in the electrically insulated through hole;
providing a first die and a second die, each die having a through via and an electrically conductive substance therein;
thermally coupling the first die to at least a portion of the first major surface of the heat spreader, the portion including the opening, wherein the first die is located with respect to the first major surface of the heat spreader; and
thermally coupling the second die to at least a portion of the second major surface of the heat spreader, the portion including the opening, wherein the second die is located with respect to the second major surface of the heat spreader;
wherein the first die includes a first surface of an electrically conductive material electrically coupled to the electrically conductive substance of the through via of the first die prior to the thermally coupling the first die;
wherein the second die includes a first surface of an electrically conductive material electrically coupled to the electrically conductive substance of the through via of the second die prior to the thermally coupling the second die;
disposing electrically conductive material in the electrically insulated through hole, wherein the step of disposing electrically conductive material in the electrically insulated through hole comprises placing a solder ball at the electrically insulated through hole prior to thermally coupling the at least a second die to the at least a portion of the second major surface of the heat spreader;
wherein the disposing further comprises reflowing the solder ball after the thermally coupling the first die and the thermally coupling the second die, wherein as result of the reflowing, material of the solder ball electrically contacts the first surface of the electrically conductive material of the first die and electrically contacts the first surface of the electrically conductive material of the second die;
wherein the electrically conductive material in the electrically insulated through hole of the heat spreader is coupled to the electrically conductive substance in the through via of the first die and to the electrically conductive substance in the through via of the second die.
2. The method of manufacturing a microelectronic device of claim 1 , including a plurality of flip chip bumps, at least one flip chip bump of the plurality of flip chip bumps electrically coupled to a through via of one or both of the first die and the second die.
3. A method of manufacturing a microelectronic device, comprising:
providing a heat spreader having a first major surface and a second major surface opposite the first major surface, wherein the heat spreader has an opening, an insulator in the opening, an electrically insulated through hole in the insulator, and electrically conductive material in the electrically insulated through hole;
providing a first die and a second die, each die having a through via and an electrically conductive substance therein;
thermally coupling the first die to at least a portion of the first major surface of the heat spreader, the portion including the opening, wherein the first die is located with respect to the first major surface of the heat spreader;
thermally coupling the second die to at least a portion of the second major surface of the heat spreader, the portion including the opening, wherein the second die is located with respect to the second major surface of the heat spreader;
wherein the electrically conductive material in the electrically insulated through hole of the heat spreader is coupled to the electrically conductive substance in the through via of the first die and to the electrically conductive substance in the through via of the second die;
disposing electrically conductive material in the electrically insulated through hole;
wherein the step of disposing electrically conductive material in the electrically insulated through hole comprises filling the electrically insulated through hole in the heat spreader, filling the through via of the at least a first die and filling the through via of the at least a second die with an electrically conductive continuous fill material in a continuous process subsequent to thermally coupling the at least a second die to the at least a portion of the second major surface of the heat spreader.
4. A method of manufacturing a microelectronic assembly, comprising:
providing a first die having at least one through via, the at least one through via having an electrically insulating lining and an electrically conductive substance therein, wherein a thermally conductive material is located on a surface of the first die and thermally coupled to the first die, the thermally conductive material defining an opening in the thermally conductive material, and wherein a dielectric material is located in the opening, the dielectric material defining a hole in the dielectric material, the hole including an electrically conductive material; and
thermally coupling a second die to the thermally conductive material located on the surface of the first die, the second die having at least one through via, the at least one through via having an electrically insulating lining, the at least one through via having an electrically conductive substance within a volume defined by the electrically insulating lining,
wherein the electrically conductive material in the hole is electrically coupled to the electrically conductive substance in the through via of the first die and to the electrically conductive substance in the through via of the second die;
wherein the step of providing a first die includes:
depositing a dielectric material onto the first die;
removing the dielectric material from a portion from the first die wherein the removing leaves dielectric material that is near the at least one through via;
depositing a metal onto the first die, including on the dielectric material, the metal forming a heat spreader;
removing metal from the first die until the dielectric material is exposed;
removing a center portion of the dielectric until the electrically conductive substance within the electrically insulating lining is exposed; and
placing electrically conductive material in the hole of the dielectric material.
5. The method of manufacturing a microelectronic assembly of claim 4 , wherein the step of depositing a metal onto the first die comprises depositing copper onto the first die.
6. The method of manufacturing a microelectronic assembly of claim 5 , wherein the step of removing metal includes removing the copper by one of polishing, etchback, and chemical mechanical planarization.
7. A method of manufacturing a microelectronic assembly, comprising:
providing a heat spreader having a first major surface of a layer of electrically conductive material and a second major surface of the layer of electrically conductive material opposite the first major surface;
thermally coupling at least one die to at least a portion of the first major surface of the layer of electrically conductive material of the heat spreader;
thermally coupling at least one other die to at least a portion of the second major surface of the layer of electrically conductive material of the heat spreader, wherein the thermally coupling includes attaching the one other die with adhesive to the second major surface;
forming an opening in the layer of electrically conductive material of the heat spreader, the opening located in a region of the heat spreader between the at least one die and the at least one other die;
disposing an insulator in the opening to produce an electrically insulated through hole in the insulator; and
disposing electrically conductive material in the electrically insulated through hole in the insulator.
8. The method of manufacturing a microelectronic assembly of claim 7 , wherein the at least one die and the at least one other die are electrically coupled by the electrically conductive material in the electrically insulated through hole in the insulator disposed in the opening of the heat spreader.
9. The method of manufacturing a microelectronic assembly of claim 7 , wherein the heat spreader comprises an electrically conductive material.
10. The method of manufacturing a microelectronic assembly of claim 9 , wherein the layer of electrically conductive material of the heat spreader and the electrically conductive material in the electrically insulated through hole in the insulator includes a same material.
11. The method of manufacturing a microelectronic assembly of claim 7 , wherein the electrically conductive material in the electrically insulated through hole in the insulator is one of a conductive epoxy and a B-staged conductive polymer.
12. The method of manufacturing a microelectronic assembly of claim 7 , wherein the electrically conductive material in the electrically insulated through hole is solder.
13. The method of manufacturing a microelectronic assembly of claim 7 , wherein the insulator is one of silicon dioxide, silicon nitride, and a non-electrically conductive polymer.
14. The method of manufacturing a microelectronic assembly of claim 7 , wherein the at least one die includes an active side that faces the first major surface, and wherein the at least one other die includes an active side that faces the second major surface.
15. The method of manufacturing a microelectronic assembly of claim 7 , wherein the at least one die and the at least one other die each includes at least one through via and an electrically conductive substance therein, and wherein the electrically conductive material in the electrically insulated through hole of the heat spreader is coupled to the electrically conductive substance in the through via of the at least one die and to the electrically conductive substance in the through via of the at least one other die.
16. The method of manufacturing a microelectronic assembly of claim 15 , wherein at least a portion of the through via of the at least one die, at least a portion of the electrically insulated through hole in the heat spreader, and at least a portion of the through via of the at least one other die, are aligned.
17. The method of manufacturing a microelectronic assembly of claim 7 , wherein one or both of the at least one die and the at least one other die each comprises a stack of die.