Package structure for semiconductor devices
A semiconductor device package includes a heatsink platform, with a ceramic isolation layer bonded to the heatsink platform. A semiconductor die may be disposed on the ceramic isolation layer, with mold material disposed on the ceramic isolation layer and surrounding at least a portion of the semiconductor die. A redistribution layer may be disposed on the semiconductor die and the mold material. Such packages, and similar, enable the use of a thin, inexpensive device substrate, while providing an efficient thermal path to the heatsink platform, while the redistribution layer enables electrical connections that are short, low-resistance, low-inductance, and low-loss connections.
1. A semiconductor device package, comprising:
a heatsink platform;
a ceramic isolation layer bonded to the heatsink platform;
a semiconductor die disposed on the ceramic isolation layer;
mold material disposed on the ceramic isolation layer and surrounding at least a portion of the semiconductor die; and
a redistribution layer disposed on the semiconductor die and the mold material,
wherein a frequency response characteristic of the ceramic isolation layer matches frequency characteristics of one or more devices of the semiconductor die.
2. The semiconductor device package of claim 1 , wherein the heatsink platform includes copper.
3. The semiconductor device package of claim 1 , wherein the heatsink platform includes grooves within a surface of the heatsink platform on an opposite side of a surface of the heatsink platform on which the ceramic isolation layer is bonded.
4. The semiconductor device package of claim 1 , comprising an air cavity between the mold material and the semiconductor die.
5. The semiconductor device package of claim 1 , wherein the semiconductor die includes a radio frequency transistor.
6. The semiconductor device package of claim 1 , wherein the semiconductor die includes a Silicon substrate.
7. The semiconductor device package of claim 1 , wherein the semiconductor die includes a GaN device on a Silicon substrate.
8. The semiconductor device package of claim 1 , wherein the redistribution layer includes metallization connecting at least one bonding pad of the semiconductor die to a solder connection.
9. The semiconductor device package of claim 1 , further comprising:
a second semiconductor die disposed on the ceramic isolation layer and surrounded by the mold material,
wherein the redistribution layer is disposed on the second semiconductor die and connects the semiconductor die and the second semiconductor die.
10. A semiconductor device package, comprising:
a heatsink platform;
an isolation layer disposed on the heatsink platform;
a semiconductor die disposed on the isolation layer;
a mold material disposed on the isolation layer and surrounding the semiconductor die with a cavity between the mold material and the semiconductor die; and
a redistribution layer disposed on the semiconductor die and the mold material, and including metallization connecting the semiconductor die to an external solder connection.
11. The semiconductor device package of claim 10 , wherein the isolation layer includes a ceramic isolation layer.
12. The semiconductor device package of claim 10 , wherein the semiconductor die includes a radio frequency transistor.
13. The semiconductor device package of claim 10 , wherein the semiconductor die includes a Silicon substrate.
14. The semiconductor device package of claim 10 , further comprising: a second semiconductor die disposed on the isolation layer and surrounded by the mold material, wherein the redistribution layer is disposed on the second semiconductor die and connects the semiconductor die and the second semiconductor die.
15. A method of making a semiconductor device package, comprising:
bonding a ceramic isolation layer to a heatsink platform;
disposing at least one semiconductor die on the ceramic isolation layer;
forming a mold material surrounding the semiconductor die, the mold material being disposed on the isolation layer and surrounding the semiconductor die with a cavity between the mold material and the semiconductor die; and
forming a redistribution layer on the semiconductor die and the mold material.
16. The method of claim 15 , comprising:
disposing at least two semiconductor die on the ceramic isolation layer, including the at least one semiconductor die;
forming the mold material surrounding the at least two semiconductor die; and
forming the redistribution layer on the at least two semiconductor die and the mold material.
17. The method of claim 16 , comprising:
cutting the ceramic isolation layer, the heatsink platform, and the mold material to singulate the at least two semiconductor die.
18. The method of claim 16 , comprising:
cutting the ceramic isolation layer, the heatsink platform, and the mold to provide the at least two semiconductor die within a single semiconductor device package.
19. The method of claim 16 , comprising:
connecting the at least two semiconductor die using the redistribution layer.