Multichip module supports and related methods
Implementations of a semiconductor device may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be formed by at least two semiconductor die. The warpage of one of the first largest planar surface or the second largest planar surface may be less than 200 microns.
1. A semiconductor device package comprising:
at least a first semiconductor die and
a second semiconductor die; and
one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to the first semiconductor die and to the second semiconductor die at a largest planar surface, a thickness, or any combination thereof of each of the first semiconductor die and the second semiconductor die;
wherein the largest planar surface of the first semiconductor die and the largest planar surface of the second semiconductor die lie in a same plane;
wherein the first semiconductor die is coupled to the second semiconductor die through the one of the permanent die support structure, the temporary die support structure, or any combination thereof; and
wherein a warpage of the largest planar surface of the at least first semiconductor die and a warpage of the largest planar surface of the second semiconductor die is less than 200 microns after coupling with the one of the permanent die support structure, the temporary die support structure, or any combination thereof.
2. The device package of claim 1 , wherein the thickness is between 0.1 microns and 125 microns.
3. The device package of claim 1 , wherein a perimeter of the first semiconductor die or the second semiconductor die is rectangular and a size of the first semiconductor die or the second semiconductor die is at least 6 mm by 6 mm.
4. The device package of claim 1 , wherein a perimeter of the first semiconductor die or the second semiconductor die is rectangular and a size of the first semiconductor die or the second semiconductor die is 211 mm by 211 mm or smaller.
5. The device package of claim 1 , wherein the permanent die support structure comprises a mold compound.
6. The device package of claim 1 , wherein a perimeter of the first semiconductor die comprises a closed shape and a perimeter of the second semiconductor die comprises a closed shape.
7. The device package of claim 1 , wherein the one of the permanent die support structure, the temporary die support structure, or any combination thereof comprises a perimeter comprising a closed shape.
8. The device package of claim 1 , further comprising a second permanent die support structure, a second temporary die support structure, or any combination thereof coupled to the first semiconductor die and to the second semiconductor die at the largest planar surface, the thickness, or any combination thereof of each of the first semiconductor die and the second semiconductor die.
9. The device package of claim 1 , wherein the permanent die support structure, the temporary die support structure, or any combination thereof comprises two or more layers.
10. A die support structure for a semiconductor device package comprising:
a material configured to be one of permanently coupled or temporarily coupled to a first semiconductor die and to a second semiconductor die coupled together in a single semiconductor device at a largest planar surface, a thickness, or any combination thereof of each of the first semiconductor die and the second semiconductor die;
wherein the largest planar surface of the first semiconductor die and the largest planar surface the second semiconductor die lie in a same plane when coupled together by the material; and
wherein the material, when coupled with the first semiconductor die and with the second semiconductor die, is configured to reduce a warpage of the largest planar surface of the first semiconductor die and a warpage of the largest planar surface of the second semiconductor die to less than 200 microns.
11. The die support structure of claim 10 , wherein the thickness of the first semiconductor die and the thickness of the second semiconductor die are between 0.1 microns and 125 microns.
12. The die support structure of claim 10 , wherein the material is a mold compound.
13. The die support structure of claim 10 , wherein the material is configured to be removable by one of exposure to light, ultrasonic energy, peeling, etching, grinding, or any combination thereof.
14. The die support structure of claim 10 , wherein the material comprises a perimeter comprising a closed shape.
15. The die support structure of claim 10 , wherein the material is a first portion of material and further comprising a second portion of material configured to be coupled to the largest planar surface, the thickness, or any combination thereof.