Silicon precursor compounds and method for forming silicon-containing films
Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.
1. A method for forming a silicon-containing film on the surface of a microelectronic device, which comprises introducing at least one compound of Formula (I):
wherein each R 1 is independently chosen from hydrogen or C 1 -C 4 alkyl, and each R 2 is independently chosen from chloro, bromo, iodo, hydrogen, or C 1 -C 4 alkyl, provided that no fewer than two of R 2 is chosen from chloro, bromo, or iodo, to said surface in a reaction chamber, under atomic layer deposition conditions at a temperature of greater than 600° C., the atomic layer deposition conditions are non-plasma conditions, the silicon-containing film is free of halides, the silicon-containing film is a silicon nitride film with about 9% to about 13% carbon with a silicon to nitrogen ratio of about 1:1, and wherein the compound of Formula (I) has a purity of greater than 98%.
2. The method of claim 1 , wherein the atomic layer deposition conditions are at a temperature of greater than 600° C. to about 900° C.
3. The method of claim 1 , wherein the atomic layer deposition conditions are at a temperature of about 625° C. to about 725° C.
4. The method of claim 1 , wherein the silicon-containing film has a thickness of from about 100 Å to about 1000 Å.
5. The method of claim 1 , wherein the silicon-containing film has a thickness of from about 200 Å to about 500 Å.
6. The method of claim 1 , wherein the surface is chosen from silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, aluminum, tungsten, copper, cobalt, molybdenum, ruthenium, a silicon wafer, or combinations thereof.
7. The method of claim 1 , wherein the compound of Formula (I) has the formula:
8. A method for forming a silicon-containing film on the surface of a microelectronic device, which comprises introducing at least one compound of Formula (I):
wherein each R 1 is independently chosen from hydrogen or C 1 -C 4 alkyl, and each R 2 is independently chosen from chloro, bromo, iodo, hydrogen, or C 1 -C 4 alkyl, provided that no fewer than two of R 2 is chosen from chloro, bromo, or iodo, to said surface in a reaction chamber, under thermal atomic layer deposition conditions at a temperature of greater than 400° C., wherein the thermal atomic layer deposition conditions are non-plasma conditions, the silicon-containing film is free of halides, the silicon-containing film is a silicon nitride film with about 9% to about 13% carbon and a silicon to nitrogen ratio of about 1:1, and wherein the compound of Formula (I) has a purity of greater than 98%.
9. The method of claim 8 , wherein the silicon-containing film has a thickness of from about 20 Å to about 1000 Å.
10. The method of claim 8 , wherein the silicon-containing film has a thickness of from about 100 Å to about 250 Å.
11. The method of claim 8 , wherein the compound of Formula (I) has the formula: