Semiconductor device and method of forming semiconductor package with RF antenna interposer having high dielectric encapsulation
A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical component over a surface of the substrate;
disposing an antenna interposer over the substrate; and
depositing a first encapsulant around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant in the range of 14 to 21.
2. A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical component over a surface of the substrate;
disposing an antenna interposer over the substrate; and depositing a first encapsulant around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant; and
depositing a second encapsulant over the electrical component, wherein the second encapsulant comprises a low dielectric constant less than the high dielectric constant of the first encapsulant.
3. The method of claim 2 , further including disposing a shielding layer over the second encapsulant.
4. The method of claim 1 , wherein the antenna interposer includes a conductive layer operating as an antenna and an insulating layer comprising a low dielectric constant less than the high dielectric constant of the first encapsulant.
5. The method of claim 1 , wherein providing the substrate includes:
forming an insulating layer comprising a low dielectric constant less than the high dielectric constant of the first encapsulant; and
forming a conductive layer over the insulating layer.
6. The method of claim 1 , further including:
providing an antenna substrate comprising a plurality of antenna interposers;
forming a plurality of bumps over the antenna substrate; and
singulating the antenna substrate into a plurality of antenna interposers.
7. A method of making a semiconductor device, comprising:
providing a substrate;
disposing an antenna interposer over the substrate; and
depositing a first encapsulant around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant in the range of 14 to 21.
8. The method of claim 7 , further including disposing an electrical component over a surface of the substrate.
9. The method of claim 8 , further including depositing a second encapsulant over the electrical component, wherein the second encapsulant comprises a low dielectric constant less than the high dielectric constant of the first encapsulant.
10. The method of claim 9 , further including disposing a shielding layer over the second encapsulant.
11. The method of claim 7 , wherein the antenna interposer includes a conductive layer operating as an antenna and an insulating layer comprising a low dielectric constant less than the high dielectric constant of the first encapsulant.
12. The method of claim 7 , wherein providing the substrate includes:
forming an insulating layer comprising a low dielectric constant less than the high dielectric constant of the first encapsulant; and
forming a conductive layer over the insulating layer.
13. A method of making a semiconductor device, comprising:
providing an antenna substrate comprising a plurality of antenna interposers;
forming a plurality of bumps over the antenna substrate;
singulating the antenna substrate into a plurality of individual antenna interposers;
providing a substrate;
disposing the individual antenna interposers over the substrate; and
depositing a first encapsulant around the individual antenna interposers, wherein the first encapsulant comprises a high dielectric constant.
14. A semiconductor device, comprising:
a substrate;
an electrical component disposed over a surface of the substrate;
an antenna interposer disposed over the substrate; and
a first encapsulant deposited around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant in the range of 14 to 21.
15. The semiconductor device of claim 14 , further including a second encapsulant deposited over the electrical component, wherein the second encapsulant comprises a low dielectric constant less than the high dielectric constant of the first encapsulant.
16. The semiconductor device of claim 15 , further including a shielding layer disposed over the second encapsulant.
17. The semiconductor device of claim 14 , wherein the antenna interposer includes a conductive layer operating as an antenna and an insulating layer comprising a low dielectric constant less than the high dielectric constant of the first encapsulant.
18. The semiconductor device of claim 17 , wherein the conductive layer is exposed from the first encapsulant.
19. The semiconductor device of claim 14 , wherein the substrate includes:
an insulating layer comprising a low dielectric constant less than the high dielectric constant of the first encapsulant; and
a conductive layer formed over the insulating layer.
20. A semiconductor device, comprising:
a substrate;
an electrical component disposed over a surface of the substrate;
an antenna interposer disposed over the substrate;
a first encapsulant deposited around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant; and
a second encapsulant deposited over the electrical component, wherein the second encapsulant comprises a low dielectric constant less than the high dielectric constant of the first encapsulant.
21. The semiconductor device of claim 20 , further including a shielding layer disposed over the second encapsulant.
22. The semiconductor device of claim 20 , wherein the antenna interposer includes a conductive layer operating as an antenna and an insulating layer comprising a low dielectric constant less than the high dielectric constant of the first encapsulant.
23. The semiconductor device of claim 20 , wherein the substrate includes:
an insulating layer comprising a low dielectric constant less than the high dielectric constant of the first encapsulant; and
a conductive layer formed over the insulating layer.
24. The method of claim 1 , further including depositing a second encapsulant over the electrical component, wherein the second encapsulant comprises a low dielectric constant less than the high dielectric constant of the first encapsulant.
25. The method of claim 24 , further including disposing a shielding layer over the second encapsulant.