IP Library Granted Patent US 12,116,502
Granted Patent B2
US 12,116,502 · App. 17/557,412 · Granted Oct 15, 2024

Self-stopping polishing composition and method for high topological selectivity

Inventors: Juyeon Chang (Bolingbrook, IL); Sudeep Pallikkara Kuttiatoor (Naperville, IL); Sajo Naik (Naperville, IL); Elliot Knapton (Aurora, IL); Jinfeng Wang (Naperville, IL); Michael Willhoff (Naperville, IL)
Assignee: CMC Materials LLC
C09G1/02H01L21/31053H01L21/3212
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Quick Facts
Patent No.
US 12,116,502
App. No.
17/557,412
Granted
Oct 15, 2024
Kind
B2
Abstract

The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer compound; and (e) water, wherein the polishing composition has a pH of about 5.5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using said composition.

Claims (42)

1. A chemical-mechanical polishing composition comprising:

(a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof;

(b) a self-stopping agent selected from a compound of formula (I):

wherein R is selected from the group consisting of hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, each of which may be substituted or unsubstituted;

(c) a cationic monomer; and

(d) water,

wherein the polishing composition has a pH of about 5.5 to about 8.

2. The polishing composition of claim 1 , wherein the polishing composition comprises about 0.001 wt. % to about 10 wt. % of the abrasive.

3. The polishing composition of claim 1 , wherein the polishing composition comprises about 0.05 wt. % to about 5 wt. % of the abrasive.

4. The polishing composition of claim 1 , wherein the abrasive is a ceria abrasive.

5. The polishing composition of claim 1 , wherein the polishing composition has a pH of about 5.5 to about 7.

6. The polishing composition of claim 5 , wherein the polishing composition has a pH of about 6 to about 6.5.

7. The polishing composition of claim 1 , wherein the self-stopping agent is selected from hydroxamic acid, acetohydroxamic acid, benzhydroxamic acid, salicylhydroxamic acid, and combinations thereof.

8. The polishing composition of claim 7 , wherein the self-stopping agent is benzhydroxamic acid.

9. The polishing composition of claim 1 , wherein the chemical-mechanical polishing composition further comprises a nonionic polymer.

10. The polishing composition of claim 9 , wherein the nonionic polymer is selected from polyalkylene glycols, polyetheramines, polyethylene oxide/polypropylene oxide copolymers, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkyleneoxide copolymers, hydrophobically modified polyacrylate copolymers, hydrophilic nonionic polymers, polysaccharides, and combinations thereof.

11. The polishing composition of claim 10 , wherein the nonionic polymer is a polyethylene oxide/polypropylene oxide copolymer.

12. The polishing composition of claim 1 , wherein the cationic monomer is selected from 2-(dimethylamino)ethyl acrylate (“DMAEA”), 2-(dimethylamino)ethyl methacrylate (“DMAEM”), 3-(dimethylamino)propyl methacrylamide (“DMAPMA”), 3-(dimethylamino)propyl acrylamide (“DMAPA”), 3-methacrylamidopropyl-trimethyl-ammonium chloride (“MAPTAC”), 3-acrylamidopropyl-trimethyl-ammonium chloride (“APTAC”), diallyldimethylammonium chloride (“DADMAC”), 2-(acryloyloxy)-N,N,N-trimethylethanaminium chloride (“DMAEA.MCQ”), 2-(methacryloyloxy)-N,N,N-trimethylethanaminium chloride (“DMAEM.MCQ”), N,N-dimethylaminoethyl acrylate benzyl chloride (“DMAEA.BCQ”), N,N-dimethylaminoethyl methacrylate benzyl chloride (“DMAEM.BCQ”), salts thereof, and combinations thereof.

13. The polishing composition of claim 12 , wherein the cationic monomer is diallyldimethylammonium chloride (“DADMAC”) or a salt thereof.

14. A method of chemically-mechanically polishing a substrate comprising:

(i) providing a substrate,

(ii) providing a polishing pad,

(iii) providing a chemical-mechanical polishing composition comprising:

(a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof;

(b) a self-stopping agent selected from a compound of formula (I):

wherein R is selected from the group consisting of hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, each of which may be substituted or unsubstituted;

(c) a cationic monomer; and

(d) water,

wherein the polishing composition has a pH of about 5.5 to about 8,

(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and

(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

15. The method of claim 14 , wherein the polishing composition comprises about 0.001 wt. % to about 10 wt. % of the abrasive.

16. The method of claim 15 , wherein the polishing composition comprises about 0.05 wt. % to about 5 wt. % of the abrasive.

17. The method of claim 14 , wherein the abrasive is a ceria abrasive.

18. The method of claim 14 , wherein the polishing composition has a pH of about 5.5 to about 7.

19. The method of claim 18 , wherein the polishing composition has a pH of about 6 to about 6.5.

20. The method of claim 14 , wherein the self-stopping agent is selected from hydroxamic acid, acetohydroxamic acid, benzhydroxamic acid, salicylhydroxamic acid, and combinations thereof.

21. The method of claim 20 , wherein the self-stopping agent is benzhydroxamic acid.

22. The method of claim 14 , wherein the chemical-mechanical polishing composition further comprises a nonionic polymer.

23. The method of claim 22 , wherein the nonionic polymer is selected from polyalkylene glycols, polyetheramines, polyethylene oxide/polypropylene oxide copolymers, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkyleneoxide copolymers, hydrophobically modified polyacrylate copolymers, hydrophilic nonionic polymers, polysaccharides, and combinations thereof.

24. The method of claim 14 , wherein the cationic monomer is selected from 2-(dimethylamino)ethyl acrylate (“DMAEA”), 2-(dimethylamino)ethyl methacrylate (“DMAEM”), 3-(dimethylamino)propyl methacrylamide (“DMAPMA”), 3-(dimethylamino)propyl acrylamide (“DMAPA”), 3-methacrylamidopropyl-trimethyl-ammonium chloride (“MAPTAC”), 3-acrylamidopropyl-trimethyl-ammonium chloride (“APTAC”), diallyldimethylammonium chloride (“DADMAC”), 2-(acryloyloxy)-N,N,N-trimethylethanaminium chloride (“DMAEA.MCQ”), 2-(methacryloyloxy)-N,N,N-trimethylethanaminium chloride (“DMAEM.MCQ”), N,N-dimethylaminoethyl acrylate benzyl chloride (“DMAEA.BCQ”), N,N-dimethylaminoethyl methacrylate benzyl chloride (“DMAEM.BCQ”), salts thereof, and combinations thereof.

25. The method of claim 24 , wherein the cationic monomer is diallyldimethylammonium chloride (“DADMAC”) or a salt thereof.

Assignments (3)
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
Continuity (2)
Provisional Application 63128445 · Dec 21, 2020
Related Publication 20220195244A1 · Jun 23, 2022