CERIA-BASED SLURRY COMPOSITIONS FOR SELECTIVE AND NONSELECTIVE CMP OF SILICON OXIDE, SILICON NITRIDE, AND POLYSILICON

1 . A chemical-mechanical polishing composition comprising:

(a) ceria abrasive particles;

(b) a cationic polymer, wherein the cationic polymer comprises a cationic monomer selected from N-vinylimidazole, 2-(dimethylamino)ethyl acrylate (“DMAEA”), 2-(dimethylamino)ethyl methacrylate (“DMAEM”), 3-(dimethylamino)propyl methacrylamide (“DMAPMA”), 3-(dimethylamino)propyl acrylamide (“DMAPA”), 3-methacrylamidopropyl-trimethyl-ammonium chloride (“MAPTAC”), 3-acrylamidopropyl-trimethyl-ammonium chloride (“APTAC”), diallyldimethylammonium chloride (“DADMAC”), 2-(acryloyloxy)-N,N,N-trimethylethanaminium chloride (“DMAEA.MCQ”), 2-(methacryloyloxy)-N,N,N-trimethylethanaminium chloride (“DMAEM.MCQ”), N,N-dimethylaminoethyl acrylate benzyl chloride (“DMAEA.BCQ”), N,N-dimethylaminoethyl methacrylate benzyl chloride (“DMAEM.BCQ”), salts thereof, and combinations thereof;

(c) a buffer, wherein the buffer is a heterocyclic or heteroaromatic amine-based compound comprising from one to five nitrogen atoms; and

(d) water,

wherein the polishing composition has a pH of about 6 to about 9.

2 . The polishing composition of claim 1 , wherein the polishing composition comprises about 0.001 wt. % to about 10 wt. % of the ceria abrasive particles.

3 . The polishing composition of claim 1 , wherein the polishing composition has a pH of about 7 to about 8.

4 . The polishing composition of claim 1 , wherein the polishing composition further comprises a nonionic polymer selected from a polyalkylene glycol, polyetheramine, polyethylene oxide/polypropylene oxide copolymer, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkyleneoxide copolymer, hydrophobically modified polyacrylate copolymer, hydrophilic nonionic polymer, polysaccharide, and combinations thereof.

5 . The polishing composition of claim 1 , wherein the polishing composition further comprises a cationic surfactant.

6 . The polishing composition of claim 1 , wherein the polishing composition further comprises a self-stopping agent of formula (I):

wherein R is selected from hydrogen, alkyl, heteroalkyl, cycloalkyl, heterocycloalkyl, aryl, and heteroaryl, each of which may be substituted or unsubstituted.

7 . The polishing composition of claim 1 , wherein the polishing composition further comprises a conductivity adjust selected from an ammonium salt, a potassium salt, and a combination thereof.

8 . The polishing composition of claim 7 , wherein the conductivity adjust is selected from ammonium nitrate, ammonium chloride, ammonium bromide, ammonium acetate, potassium nitrate, potassium chloride, potassium bromide, potassium acetate, diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, and combinations thereof.

9 . The polishing composition of claim 7 , wherein the polishing composition has a conductivity of at least 170 μS/cm.

10 . The polishing composition of claim 7 , wherein the polishing composition has a conductivity of at least 350 μS/cm.

11 . A method of chemically-mechanically polishing a substrate comprising:

(i) providing a substrate,

(ii) providing a polishing pad,

(iii) providing a chemical-mechanical polishing composition comprising:

(a) ceria abrasive particles;

(b) a cationic polymer, wherein the cationic polymer comprises a cationic monomer selected from N-vinylimidazole, 2-(dimethylamino)ethyl acrylate (“DMAEA”), 2-(dimethylamino)ethyl methacrylate (“DMAEM”), 3-(dimethylamino)propyl methacrylamide (“DMAPMA”), 3-(dimethylamino)propyl acrylamide (“DMAPA”), 3-methacrylamidopropyl-trimethyl-ammonium chloride (“MAPTAC”), 3-acrylamidopropyl-trimethyl-ammonium chloride (“APTAC”), diallyldimethylammonium chloride (“DADMAC”), 2-(acryloyloxy)-N,N,N-trimethylethanaminium chloride (“DMAEA.MCQ”), 2-(methacryloyloxy)-N,N,N-trimethylethanaminium chloride (“DMAEM.MCQ”), N,N-dimethylaminoethyl acrylate benzyl chloride (“DMAEA.BCQ”), N,N-dimethylaminoethyl methacrylate benzyl chloride (“DMAEM.BCQ”), salts thereof, and combinations thereof;

(c) a buffer, wherein the buffer is a heterocyclic or heteroaromatic amine-based compound comprising from one to five nitrogen atoms; and

(d) water,

wherein the polishing composition has a pH of about 6 to about 9,

(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and

(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

12 . The method of claim 11 , wherein the polishing composition comprises about 0.001 wt. % to about 10 wt. % of the ceria abrasive particles.

13 . The method of claim 11 , wherein the polishing composition has a pH of about 7 to about 8.

14 . The method of claim 11 , wherein the polishing composition further comprises a conductivity adjust selected from an ammonium salt, a potassium salt, and a combination thereof.

15 . The method of claim 14 , wherein the conductivity adjust is selected from ammonium nitrate, ammonium chloride, ammonium bromide, ammonium acetate, potassium nitrate, potassium chloride, potassium bromide, potassium acetate, diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, and combinations thereof.

16 . The method of claim 11 , wherein the substrate comprises silicon oxide, silicon nitride, and polysilicon, and wherein at least a portion of the silicon oxide is abraded at a silicon oxide removal rate, wherein at least a portion of the silicon nitride is abraded at a silicon nitride removal rate, and wherein at least a portion of the polysilicon is abraded at a polysilicon removal rate to polish the substrate.

17 . The method of claim 11 , wherein the polishing composition further comprises a nonionic polymer selected from a polyalkylene glycol, polyetheramine, polyethylene oxide/polypropylene oxide copolymer, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkyleneoxide copolymer, hydrophobically modified polyacrylate copolymer, hydrophilic nonionic polymer, polysaccharide, and combinations thereof.

18 . The method of claim 11 , wherein the polishing composition further comprises a cationic surfactant.

19 . The method of claim 11 , wherein the polishing composition further comprises a self-stopping agent of formula (I):

wherein R is selected from hydrogen, alkyl, heteroalkyl, cycloalkyl, heterocycloalkyl, aryl, and heteroaryl, each of which may be substituted or unsubstituted.

20 . The method of claim 18 , wherein the cationic surfactant is selected from N,N,N′,N′,N′-pentamethyl-N-tallow alkyl-1,3-propanediammonium dichloride, (oxydi-2,1-ethanediyl)bis(coco alkyl)dimethyl ammonium dichlorides, salts thereof, and combinations thereof.