SILICON CARBONITRIDE POLISHING COMPOSITION AND METHOD
A chemical mechanical polishing composition for polishing a substrate including a silicon carbonitride layer, the composition comprising, consisting essentially of, or consisting of a water based liquid carrier, anionic colloidal silica particles dispersed in the liquid carrier, a topography control agent, and having a pH in a range from about 2 to about 7.
1 . A chemical mechanical polishing composition for polishing a silicon carbide nitride layer, the composition comprising:
an aqueous based liquid carrier;
anionic colloidal silica particles dispersed in the liquid carrier;
bis tris methane; and
a pH in a range from about 4 to about 7.
2 . The composition of claim 1 , wherein the anionic colloidal silica particles have a zeta potential in the polishing composition of greater than about negative 10.
3 . The composition of claim 1 , comprising from about 1 weight percent to about 6 weight percent of the anionic colloidal silica abrasive particles.
4 . The composition of claim 1 , comprising from about 2 weight percent to about 4 weight percent of the anionic colloidal silica abrasive particles.
5 . The composition of claim 1 , wherein the anionic colloidal silica abrasive particles have an average particle size of less than 100 nm.
6 . The composition of claim 1 , wherein the anionic colloidal silica abrasive particles have an average particle size in a range from about 60 to about 80 nm.
7 . The composition of claim 1 , comprising from about 200 ppm to about 2000 ppm by weight of the bis tris methane.
8 . The composition of claim 1 , comprising from about 600 ppm to about 1200 ppm by weight of the bis tris methane.
9 . The composition of claim 1 , having a pH from about 5 to about 6.
10 . The composition of claim 1 , comprising:
from about 1 weight percent to about 6 weight percent of the anionic colloidal silica abrasive particles;
from about 200 ppm to about 2000 ppm by weight of the bis tris methane; and
wherein the anionic colloidal silica abrasive particles have an average particle size of less than 100 nm.
11 . The composition of claim 1 , comprising:
from about 2 weight percent to about 4 weight percent of the anionic colloidal silica abrasive particles;
from about 600 ppm to about 1200 ppm by weight of the bis tris methane;
wherein the anionic colloidal silica abrasive particles have an average particle size in a range from about 60 to about 80 nm; and
wherein the composition has a pH from about 5 to about 6.
12 . A chemical mechanical polishing composition for polishing a silicon carbide nitride layer, the composition comprising:
an aqueous based liquid carrier;
anionic colloidal silica particles dispersed in the liquid carrier;
acetic acid; and
a pH in a range from about 2.5 to about 4.
13 . The composition of claim 12 , wherein the anionic colloidal silica particles have a zeta potential in the polishing composition of greater than about negative 10.
14 . The composition of claim 12 , comprising from about 1 weight percent to about 6 weight percent of the anionic colloidal silica abrasive particles.
15 . The composition of claim 12 , comprising from about 2 weight percent to about 4 weight percent of the anionic colloidal silica abrasive particles.
16 . The composition of claim 12 , wherein the anionic colloidal silica abrasive particles have an average particle size of less than 100 nm.
17 . The composition of claim 12 , wherein the anionic colloidal silica abrasive particles have an average particle size in a range from about 60 to about 80 nm.
18 . The composition of claim 12 , having a pH from about 3 to about 4.
19 . The composition of claim 12 , comprising:
from about 1 weight percent to about 6 weight percent of the anionic colloidal silica abrasive particles; and
wherein the anionic colloidal silica abrasive particles have an average particle size of less than 100 nm.
20 . The composition of claim 12 , comprising:
from about 2 weight percent to about 4 weight percent of the anionic colloidal silica abrasive particles;
wherein the anionic colloidal silica abrasive particles have an average particle size in a range from about 60 to about 80 nm; and
wherein the composition has a pH from about 3 to about 4.
21 . A method of chemical mechanical polishing a substrate having at least one silicon carbonitride layer, the method comprising:
(a) contacting the substrate with the polishing composition of claim 1 ;
(b) moving the polishing composition relative to the substrate; and
(c) abrading the substrate to remove a portion of the silicon carbonitride layer from the substrate and thereby polish the substrate.
22 . A method of chemical mechanical polishing a substrate having at least one silicon carbonitride layer, the method comprising:
(a) contacting the substrate with the polishing composition of claim 12 ;
(b) moving the polishing composition relative to the substrate; and
(c) abrading the substrate to remove a portion of the silicon carbonitride layer from the substrate and thereby polish the substrate.