Semiconductor device and method of forming semiconductor package with RF antenna interposer having high dielectric encapsulation
A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.
1. A semiconductor device, comprising:
a substrate;
an electrical component disposed over a first surface of the substrate;
a first encapsulant deposited over the electrical component;
a shielding layer disposed over the first encapsulant; and
an antenna interposer disposed over a second surface of the substrate opposite the first surface of the substrate, wherein the antenna interposer is a unitary body substantially covering the substrate.
2. The semiconductor device of claim 1 , further including
a second encapsulant deposited over the antenna interposer.
3. The semiconductor device of claim 2 , wherein the second encapsulant comprises a high dielectric constant in the range of 14 to 21.
4. The semiconductor device of claim 2 , wherein the first encapsulant comprises a low dielectric constant less than a high dielectric constant of the second encapsulant.
5. The semiconductor device of claim 2 , further including an encapsulant bump disposed over the second encapsulant.
6. A semiconductor device, comprising:
a substrate;
an antenna interposer disposed over a first surface of the substrate, wherein the antenna interposer is a unitary body substantially covering the substrate;
an electrical component disposed over a second surface of the substrate opposite the first surface of the substrate;
a first encapsulant deposited over the electrical component;
a second encapsulant deposited over the antenna interposer; and
a shielding layer disposed over the first encapsulant.
7. The semiconductor device of claim 6 , wherein the second encapsulant comprises a high dielectric constant in the range of 14 to 21.
8. The semiconductor device of claim 6 , wherein the first encapsulant comprises a low dielectric constant less than a high dielectric constant of the second encapsulant.
9. The semiconductor device of claim 6 , wherein the antenna interposer includes a conductive layer operating as an antenna and an insulating layer comprising a low dielectric constant less than a high dielectric constant of the second encapsulant.
10. The semiconductor device of claim 6 , further including an encapsulant bump disposed over the second encapsulant.
11. A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical component over a first surface of the substrate;
disposing a shielding layer over the electrical component; and
disposing an antenna interposer over a second surface of the substrate opposite the first surface of the substrate, wherein the antenna interposer is a unitary body substantially covering the substrate.
12. The method of claim 11 , further including:
depositing a first encapsulant over the electrical component; and
depositing a second encapsulant over the antenna interposer.
13. The method of claim 12 , wherein the second encapsulant comprises a high dielectric constant in the range of 14 to 21.
14. The method of claim 12 , wherein the first encapsulant comprises a low dielectric constant less than a high dielectric constant of the second encapsulant.
15. The method of claim 12 , further including disposing an encapsulant bump over the second encapsulant.
16. The method of claim 12 , further including disposing the shielding layer disposed over the first encapsulant.
17. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a shielding layer over the substrate; and
disposing an antenna interposer over a first surface of the substrate, wherein the antenna interposer is a unitary body substantially covering the substrate.
18. The method of claim 17 , further including:
disposing an electrical component over a second surface of the substrate opposite the first surface of the substrate;
depositing a first encapsulant over the electrical component; and
depositing a second encapsulant over the antenna interposer.
19. The method of claim 18 , wherein the second encapsulant comprises a high dielectric constant in the range of 14 to 21.
20. The method of claim 18 , wherein the first encapsulant comprises a low dielectric constant less than a high dielectric constant of the second encapsulant.
21. The method of claim 18 , further including disposing an encapsulant bump over the second encapsulant.
22. The method of claim 18 , further including disposing the shielding layer over the first encapsulant.