Non-volatile memory with enhanced early program termination mode for neighbor plane disturb
A non-volatile storage apparatus comprises memory cells organized into multiple planes. To prevent one plane from disturbing another plane while concurrently programming memory cells in a first plane and memory cells in a second plane, the system determines that the memory cells in the second plane are programming slower than the memory cells of the first plane, tests whether the memory cells in the first plane have threshold voltages greater than a test level that is higher than a target verify level, determines that the memory cells in the first plane failed programming if more than a maximum number of the memory cells in the first plane have threshold voltages greater than the test level, and determines that the memory cells in the second plane failed programming if not more than a maximum number of the memory cells of the fast plane have threshold voltages greater than the test level.
1 . A non-volatile storage apparatus, comprising:
non-volatile memory cells organized into a first plane and a second plane; and
a control circuit connected the non-volatile memory cells, the control circuit is configured to:
concurrently program the non-volatile memory cells in the first plane and the non-volatile memory cells in the second plane using a target verify level,
determine that the non-volatile memory cells in the second plane are programming slower than the non-volatile memory cells of the first plane,
test whether the non-volatile memory cells in the first plane have threshold voltages greater than a test level that is higher than the target verify level,
determine that the non-volatile memory cells in the first plane failed programming if more than a maximum number of the non-volatile memory cells in the first plane are determined to have threshold voltages greater than the test level, and
determine that the non-volatile memory cells in the second plane failed programming if not more than a maximum number of the non-volatile memory cells of the first plane are determined to have threshold voltages greater than the test level.
2 . The non-volatile storage apparatus of claim 1 , wherein:
the control circuit is configured to concurrently program the non-volatile memory cells in the first plane and the non-volatile memory cells in the second plane by applying doses of programming to the non-volatile memory cells in the first plane and the non-volatile memory cells in the second plane; and
the control circuit is configured to determine that the non-volatile memory cells in the second plane are programming slower than the non-volatile memory cells in the first plane by determining that the non-volatile memory cells in the first plane successfully verify for programming and stopping the applying of doses of programming to the non-volatile memory cells in the second plane in response to applying a maximum number of doses of programming after the non-volatile memory cells in the first plane successfully verify for programming and the non-volatile memory cells in the second plane not successfully verifying for programming.
3 . The non-volatile storage apparatus of claim 1 , wherein:
the control circuit is configured to concurrently program the non-volatile memory cells in the first plane and the non-volatile memory cells in the second plane using the target verify level by programming the non-volatile memory cells in the first plane and the non-volatile memory cells in the second plane to a target data state;
the target verify level is for the target data state; and
the control circuit is configured to determine that the non-volatile memory cells in the second plane are programming slower than the non-volatile memory cells in the first plane by determining that the non-volatile memory cells in the second plane are programming to the target data state slower than the non-volatile memory cells in the first plane are programming to the target data state.
4 . The non-volatile storage apparatus of claim 3 , wherein:
the control circuit is configured to concurrently program the non-volatile memory cells in the first plane and the non-volatile memory cells in the second plane by applying doses of programming to the non-volatile memory cells in the first plane and the non-volatile memory cells in the second plane; and
the control circuit is configured to determine that the non-volatile memory cells in the second plane are programming slower than the non-volatile memory cells in the first plane by determining that the non-volatile memory cells in the first plane successfully verify for programming to the target data state based on the target verify level and stopping the applying of doses of programming to memory cells in the second plane in response to applying a maximum number of doses of programming after the non-volatile memory cells in the first plane successfully verify for programming to the target data state and the non-volatile memory cells in the second plane not successfully verifying for programming to the target data state.
5 . The non-volatile storage apparatus of claim 1 , wherein:
the non-volatile memory cells in the first plane comprise a first block of non-volatile memory cells;
the non-volatile memory cells in the second plane comprise a second block of non-volatile memory cells;
the control circuit is configured to concurrently program the non-volatile memory cells in the first plane and the non-volatile memory cells in the second plane using the target verify level by programming the non-volatile memory cells in the first block and the non-volatile memory cells in the second to a target data state;
the target verify level is a lower bound for the target data state; and
the control circuit is configured to determine that the non-volatile memory cells in the second plane are programming slower than the non-volatile memory cells in the first plane by determining that the non-volatile memory cells of the second block are programming to the target data state slower than the non-volatile memory cells of the first block are programming to the target data state.
6 . The non-volatile storage apparatus of claim 1 , wherein the control circuit is further configured to:
determine that the non-volatile memory cells in the first plane are causing the non-volatile memory cells in the second plane to program slower than the non-volatile memory cells in the first plane if more than a maximum number of the non-volatile memory cells in the first plane are determined to have threshold voltages greater than the test level, and
determine that the non-volatile memory cells in the second plane are causing the non-volatile memory cells in the second plane to program slower than the non-volatile memory cells in the first plane if not more than a maximum number of the non-volatile memory cells in the first plane are determined to have threshold voltages greater than the test level.
7 . The non-volatile storage apparatus of claim 1 , wherein:
the control circuit is further configured to perform a countermeasure to prevent loss of data prior to a failure in the non-volatile memory cells in the first plane if the control circuit determines that the non-volatile memory cells in the first plane failed programming; and
the control circuit is further configured to perform a countermeasure to prevent loss of data prior to a failure in the non-volatile memory cells in the second plane if the control circuit determines that the non-volatile memory cells in the second plane failed programming.
8 . The non-volatile storage apparatus of claim 1 , wherein:
the control circuit is further configured to prevent the non-volatile memory cells in the first plane from further storage of valid data if the control circuit determines that the non-volatile memory cells in the first plane failed programming; and
the control circuit is further configured to prevent the non-volatile memory cells in the second plane from further storage of valid data if the control circuit determines that the non-volatile memory cells in the second plane failed programming.
9 . The non-volatile storage apparatus of claim 1 , wherein:
the non-volatile memory cells in the first plane comprise a first block of memory cells;
the non-volatile memory cells in the second plane comprise a second block of memory cells;
the control circuit is further configured to mark the first block as a bad block if the control circuit determines that the non-volatile memory cells in the first plane failed programming; and
the control circuit is further configured to mark the second block as a bad block if the control circuit determines that the non-volatile memory cells in the second plane failed programming.
10 . The non-volatile storage apparatus of claim 1 , wherein:
the control circuit is further configured to reprogram to a different location data being programmed to the non-volatile memory cells in the first plane if the control circuit determines that the non-volatile memory cells in the first plane failed programming; and
the control circuit is further configured to reprogram to a different location data being programmed to the non-volatile memory cells in the second plane if the control circuit determines that the non-volatile memory cells in the second plane failed programming.
11 . A non-volatile storage apparatus, comprising:
non-volatile memory cells organized into multiple planes; and
a control circuit connected the non-volatile memory cells, the control circuit is configured to:
concurrently program non-volatile memory cells in multiple planes to a data state,
determine that non-volatile memory cells of a particular plane are programming to the data state slower than non-volatile memory cells of a different plane, and
determine whether the non-volatile memory cells of the particular plane or the non-volatile memory cells of the different plane are causing the non-volatile memory cells of the particular plane to program to the data state slower than the non-volatile memory cells of the different plane.
12 . The non-volatile storage apparatus of claim 11 , wherein:
within each of the multiple planes, the non-volatile memory cells are organized into vertical NAND strings in blocks.
13 . The non-volatile storage apparatus of claim 11 , wherein:
the control circuit is configured to concurrently program the non-volatile memory cells in multiple planes to the data state by concurrently applying doses of programming to the non-volatile memory cells in the particular plane and the non-volatile memory cells in the different plane; and
the control circuit is configured to determine that the non-volatile memory cells of the particular plane are programming to the data state slower than the non-volatile memory cells of the different plane by determining that the non-volatile memory cells in the different plane successfully verify for programming to the data state and stopping the applying of doses of programming to the non-volatile memory cells in the particular plane in response to applying a maximum number of doses of programming after the non-volatile memory cells in the different plane successfully verify for programming to the data state and the non-volatile memory cells in the particular plane not successfully verifying for programming to the data state.
14 . The non-volatile storage apparatus of claim 11 , wherein:
the control circuit is further configured to perform a countermeasure to prevent loss of data prior to a failure in the non-volatile memory cells in the different plane if the control circuit determines that the non-volatile memory cells in the different plane are causing the non-volatile memory cells of the particular plane to program to the data state slower than the non-volatile memory cells of the different plane; and
the control circuit is further configured to perform a countermeasure to prevent loss of data prior to a failure in the non-volatile memory cells in the particular plane if the control circuit determines that the non-volatile memory cells in the particular plane are causing the non-volatile memory cells of the particular plane to program to the data state slower than the non-volatile memory cells of the different plane.
15 . The non-volatile storage apparatus of claim 11 , wherein:
the control circuit is further configured to prevent the non-volatile memory cells in the different plane from further storage of valid data if the control circuit determines that the non-volatile memory cells in the different plane are causing the non-volatile memory cells of the particular plane to program to the data state slower than the non-volatile memory cells of the different plane; and
the control circuit is further configured to prevent the non-volatile memory cells in the particular plane from further storage of valid data if the control circuit determines that the non-volatile memory cells in the particular plane are causing the non-volatile memory cells of the particular plane to program to the data state slower than the non-volatile memory cells of the different plane.
16 . A method, comprising:
applying doses of programming to non-volatile memory cells in a first plane and non-volatile memory cells in a second plane;
determining that the non-volatile memory cells in the first plane successfully verify for programming to a particular data state based on a target verify level;
stopping the applying of doses of programming to memory cells in the second plane in response to applying a maximum number of doses of programming after the non-volatile memory cells in the first plane successfully verify for programming to the particular data state and the non-volatile memory cells in the second plane not successfully verifying for programming to the particular data state;
in response to the stopping, testing whether that the non-volatile memory cells in the first plane have threshold voltages greater than a test level that is higher than the target verify level;
determining that the non-volatile memory cells in the first plane include a defect in response to determining that more than a maximum number of the non-volatile memory cells in the first plane have threshold voltages greater than the test level; and
determining that the non-volatile memory cells in the second plane include a defect in response to determining that not more than the maximum number of the non-volatile memory cells in the first plane have threshold voltages greater than the test level.
17 . The method of claim 16 , further comprising:
determining that the non-volatile memory cells in the first plane are causing the non-volatile memory cells in the second plane to program slower than the non-volatile memory cells in the first plane in response to determining that more than a maximum number of the non-volatile memory cells in the first plane have threshold voltages greater than the test level; and
determining that the non-volatile memory cells in the second plane are causing the non-volatile memory cells in the second plane to program slower than the non-volatile memory cells in the first plane in response to determining that not more than the maximum number of the non-volatile memory cells in the first plane have threshold voltages greater than the test level.
18 . The method of claim 16 , wherein:
the doses of programming are voltage pulses.
19 . The method of claim 16 , further comprising:
performing a countermeasure to prevent loss of data prior to a failure in the non-volatile memory cells in the first plane in response to determining that the non-volatile memory cells in the first plane include a defect; and
performing a countermeasure to prevent loss of data prior to a failure in the non-volatile memory cells in the second plane in response to determining that the non-volatile memory cells in the second plane include a defect.
20 . The method of claim 16 , further comprising:
preventing the non-volatile memory cells in the first plane from further storage of valid data in response to determining that the non-volatile memory cells in the first plane include a defect; and
preventing the non-volatile memory cells in the second plane from further storage of valid data in response to determining that the non-volatile memory cells in the second plane include a defect.