Dynamic sensing scheme to compensate for threshold voltage shift during sensing in a memory device
The memory device includes a memory block with a plurality of memory cells that are arranged in a plurality of word lines and a plurality of NAND strings, which are coupled to a plurality of sense nodes. Control circuitry is configured to perform a sensing operation on the memory cells of a selected word line of the plurality of word lines. During the sensing operation, the control circuitry determines a data state to be sensed and then sets a sense time as a function of the data state to be sensed. The control circuitry then applies a reference voltage to the selected word line and, for the sense time, discharges a selected sense node of the plurality of sense nodes through a selected NAND string of the plurality of NAND strings. The selected NAND string includes a selected memory cell of the plurality of memory cells.
1 . A method of performing a sensing operation in a memory device, comprising the steps of:
preparing a memory block that includes a plurality of memory cells that are arranged in a plurality of word lines and a plurality of NAND strings that are coupled to a plurality of sense nodes;
determining a data state to be sensed;
setting a sense time as a function of the data state to be sensed;
applying a reference voltage to a selected word line of the plurality of word lines;
for the sense time, discharging a selected sense node of the plurality of sense nodes through a selected NAND string of the plurality of NAND strings, the selected NAND string including a selected memory cell of the plurality of memory cells; and
during the step of discharging the selected sense node, a voltage applied by a cell source (CELSRC) driver to a CELSRC layer that is connected to the plurality of NAND strings is set to approximately zero Volts.
2 . The method as set forth in claim 1 , further including the step of, after the sense time, comparing a voltage of the selected sense node to a predetermined sense voltage to determine a threshold voltage of the selected memory cell in relation to the reference voltage.
3 . The method as set forth in claim 2 , wherein the sensing operation is a read operation.
4 . The method as set forth in claim 2 , wherein the sensing operation is a verify operation that is part of a programming operation and wherein the reference voltage is a verify voltage that is associated with the data state to be sensed.
5 . The method as set forth in claim 2 , wherein the data state to be sensed is one of a plurality of data states, and wherein each of the plurality of data states is associated with a distinctive sense time.
6 . The method as set forth in claim 5 , wherein the plurality of data states are associated with different threshold voltage ranges, and wherein the sense times associated with the data states at higher voltage ranges are longer than the sense times associated with data states at lower voltage ranges.
7 . The method as set forth in claim 5 , wherein the plurality of data states includes at least eight data states including an erased data state and at least seven programmed data states.
8 . A memory device, comprising:
a memory block including a plurality of memory cells that are arranged in a plurality of word lines and a plurality of NAND strings, the NAND strings being coupled to a plurality of sense nodes;
control circuitry that is configured to perform a sensing operation on the memory cells of a selected word line of the plurality of word lines, during the sensing operation, the control circuitry being configured to:
determine a data state to be sensed;
set a sense time as a function of the data state to be sensed;
apply a reference voltage to the selected word line;
for the sense time, discharge a selected sense node of the plurality of sense nodes through a selected NAND string of the plurality of NAND strings, the selected NAND string including a selected memory cell of the plurality of memory cells; and
while discharging the selected sense node through the selected NAND string, set a voltage that is applied by a cell source (CELSRC) to a CELSRC layer, which is connected to the plurality of NAND strings, to approximately zero Volts.
9 . The memory device as set forth in claim 8 , wherein during the sensing operation, after the sense time, the control circuitry is configured to compare a voltage of the selected sense node to a predetermined sense voltage to determine a threshold voltage of the selected memory cell in relation to the reference voltage.
10 . The memory device as set forth in claim 9 , wherein the sensing operation is a read operation.
11 . The memory device as set forth in claim 9 , wherein the sensing operation is a verify operation that is part of a programming operation and wherein the reference voltage that is applied by the control circuitry to the selected word line is a verify voltage that is associated with the data state to be sensed.
12 . The memory device as set forth in claim 9 , wherein the data state to be sensed is one of a plurality of data states, and wherein each of the plurality of data states is associated with a distinctive sense time.
13 . The memory device as set forth in claim 12 , wherein the plurality of data states are associated with different threshold voltage ranges, and wherein the sense times associated with the data states at higher voltage ranges are longer than the sense times associated with data states at lower voltage ranges.
14 . The memory device as set forth in claim 12 , wherein the plurality of data states includes at least eight data states including an erased data state and at least seven programmed data states.
15 . An apparatus, comprising:
a memory block including a plurality of memory cells that are arranged in a plurality of word lines and a plurality of NAND strings, the NAND strings being coupled to a plurality of sense nodes;
a sensing means for sensing threshold voltages of the memory cells of a selected word line of the plurality of word lines in a sensing operation, during the sensing operation, the sensing means being configured to:
determine a data state to be sensed;
set a sense time as a function of the data state to be sensed;
apply a reference voltage to the selected word line;
for the sense time, discharge a selected sense node of the plurality of sense nodes through a selected NAND string of the plurality of NAND strings, the selected NAND string including a selected memory cell of the plurality of memory cells;
after the sense time, compare a voltage of the selected sense node to a predetermined sense voltage to determine whether a threshold voltage of the selected memory cell is higher than or lower than the reference voltage; and
while discharging the selected sense node through the selected NAND string, set a voltage that is applied by a cell source (CELSRC) driver to a CELSRC layer, which is connected to the plurality of NAND strings, to approximately zero Volts.
16 . The apparatus as set forth in claim 15 , wherein the sensing operation is a read operation.
17 . The apparatus as set forth in claim 15 , wherein the sensing operation is a verify operation that is part of a programming operation and wherein the reference voltage that is applied by the sensing means to the selected word line is a verify voltage that is associated with the data state to be sensed.