Patent Assignment
Reel/Frame 004998/0745
Assignment of Assignors Interest.
Recorded: 1988-09-26
Pages: 4
Assignor
UNISYS CORPORATION, A CORP. OF DE.
Executed: 1987-08-05
Assignee
SAMSUNG SEMICONDUCTOR AND TELECOMMUNICATIONS, LTD. ("SST")
259, KONGDAN-DONG, GUMI-SI, KYUNG-SANGBUKDO, KOREA, REPUBLIC OF
Covered Properties
(47)
A Lsi Programmable Processor
Patent:
3,878,514 →
Application:
05/307,863 →
Overlap Timing Control Circuit for Conditioning Signals in a Semicondu Ctor Memory
Patent:
3,866,061 →
Application:
05/391,963 →
Concurrent Data Address and Refresh Control for a Volatile Lsi Memory System
Patent:
3,859,640 →
Application:
05/402,503 →
Multi-Microprocessor Unit on a Single Semiconductor Chip
Patent:
3,980,992 →
Application:
05/527,358 →
Fifo Buffer Register Memory Utilizing a Oneshot Data Transfer System
Patent:
3,953,838 →
Application:
05/537,680 →
Capacittor Memory Cell
Patent:
4,021,788 →
Application:
05/578,094 →
Ultra High Sensitivity Sense Amplifier for Memories Employing Single T Ransistor Cells
Patent:
4,031,522 →
Application:
05/594,579 →
Interlaced Memory Matrix Array Having Single Transistor Cells
Patent:
4,025,907 →
Application:
05/594,669 →
Mos Integrated Circuit Chip for Display
Patent:
3,997,813 →
Application:
05/630,218 →
Method for Making Transistor Structures
Patent:
4,038,107 →
Application:
05/637,177 →
High Speed Differential to Ttl Converter
Patent:
4,045,690 →
Application:
05/658,705 →
Dynamic Memory Refresh Method
Patent:
4,040,122 →
Application:
05/674,391 →
Igfet Integrated Circuit Memory Cell
Patent:
4,125,933 →
Application:
05/792,578 →
Organization for an Integrated Circuit Calculator/Controller
Patent:
4,155,118 →
Application:
05/834,928 →
Method of Making a V-Mosfield Effect Transistor for Dynamic Memory Ce Ll Having Improved Capacitance
Patent:
4,116,720 →
Application:
05/864,247 →
Compensated Mos Timing Network
Patent:
4,199,693 →
Application:
05/875,783 →
Igfet Integrated Circuit Memory Cell
Patent:
4,141,027 →
Application:
05/907,725 →
High Speed, Low Component Count, Cml Exclusive nor Gate
Patent:
4,281,258 →
Application:
05/958,255 →
Method of Forming a Metal Interconnect Structure for Integrated Circuits
Patent:
4,158,613 →
Application:
05/966,326 →
Oxidation of Silicon Wafers to Eliminate White Ribbon
Patent:
4,401,691 →
Application:
05/970,580 →
Decoder for a Prom
Patent:
4,195,358 →
Application:
05/973,175 →
Technique of Growing Thin Silicon Oxide Films
Patent:
4,214,919 →
Application:
05/973,928 →
Single Mask Method of Fabricating Complementary Integrated Circuits
Patent:
4,244,752 →
Application:
06/017,842 →
Charge Restore Circuit for Semiconductor Memories
Patent:
4,262,342 →
Application:
06/053,084 →
Ram Having a Stabilized Substrate Bias and Low-Threshold Narrow-Width Transfer Gates
Patent:
4,262,298 →
Application:
06/072,446 →
Fabrication of Integrated Circuits Employing Only Ion Implantation for All Dopant Layers
Patent:
4,261,763 →
Application:
06/080,618 →
Method for Mass Producing Miniature Field Effect Transistors in High Density Lsi/Vlsi Chips
Patent:
4,354,307 →
Application:
06/099,515 →
Method of Fabricating a Charge Transfer Channel Covered by a Stepped Insulating Layer
Patent:
4,313,253 →
Application:
06/113,388 →
Hermetic Integrated Circuit Package for High Density High Power Applications
Patent:
4,338,621 →
Application:
06/118,496 →
Method of Fabricating a Misaligned, Composite Electrical Contact on a Semiconductor Substrate
Patent:
4,381,215 →
Application:
06/153,090 →
Electronic Package for High Density Integrated Circuits
Patent:
4,296,456 →
Application:
06/155,533 →
Ecc Check Bit Generation Using Through Checking Parity Bits
Patent:
4,345,328 →
Application:
06/164,211 →
Superconductive Tunnel Junction Device and Method of Manufacture
Patent:
4,421,785 →
Application:
06/179,311 →
Jfet Dynamic Memory
Patent:
4,423,490 →
Application:
06/200,997 →
Field Effect Current Mode Logic Gate
Patent:
4,445,051 →
Application:
06/277,629 →
Extended Address Generating Apparatus and Method
Patent:
4,453,212 →
Application:
06/282,919 →
Gallium Arsenide to Emitter Coupled Logic Level Converter
Patent:
4,410,815 →
Application:
06/305,320 →
Selective Epitaxial Etch Planar Processing for Gallium Arsenide Semiconductors
Patent:
4,426,767 →
Application:
06/338,204 →
Storage Logic/Array (Sla) Circuit
Patent:
4,441,168 →
Application:
06/339,022 →
Parity Generation/Detection Logic Circuit from Transfer Gates
Patent:
4,477,904 →
Application:
06/355,804 →
Semiconductor Die-Attach Technique and Composition Therefor
Patent:
4,487,638 →
Application:
06/444,267 →
Re-Programmable Pla
Patent:
4,508,977 →
Application:
06/457,175 →
Content Addressable Memory Cell
Patent:
4,532,606 →
Application:
06/513,393 →
Complementary Metal Oxide Semiconductor Dual Port Random Access Memory Cell
Patent:
4,580,245 →
Application:
06/518,166 →
Alluminum - Refractory Metal Interconnect W/Anodized Periphery
Patent:
4,531,144 →
Application:
06/580,291 →
Semi-Conductor Device with Sandwich Passivation Coating
Patent:
4,614,666 →
Application:
06/699,028 →
Epoxy-Glass Integrated Circuit Package Having Bonding Pads in a Stepped Cavity
Patent:
4,643,935 →
Application:
06/819,995 →
Related Assignments
(5)
Other recorded transfers of the patents in this record — the chain of ownership.
Merger Delaware Effective May 30, 1982.
Jul 13, 1984
From: BURROUGHS CORPORATION A CORP OF MI (MERGED INTO); BURROUGHS DELAWARE INCORPORATED A DE CORP. (CHANGED TO)
To: BURROUGHS CORPORATION
Reel/Frame 004312/0324 →
Assignment of Assignors Interest.
Nov 1, 1988
From: BURROUGHS CORPORATION
To: SAMSUNG SEMICONDUCTOR AND TELECOMMUNICATIONS, LTD. 259, KONGDAN-DONG, GUMI-SI, KYUNG-SANGBUK-DO, KOREA, A REP. OF KOREA CORP.
Reel/Frame 004990/0682 →
Assignment of Assignors Interest.
Nov 1, 1988
From: SPERRY RAND CORPORATION
To: SAMSUNG SEMICONDUCTOR AND TELECOMMUNICATIONS, LTD., A CORP. OF REPUBLIC OF KOREA
Reel/Frame 005033/0400 →
Change of Name
Nov 7, 1994
From: SAMSUNG SEMICONDUCTOR AND TELECOMMUNICATIONS, LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 007194/0606 →
Change of Name
Aug 28, 1995
From: SAMSUNG SEMICONDUCTOR; TELECOMMUNICATIONS, LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 007492/0075 →