IP Library Assignment 011328/0980
Patent Assignment
Reel/Frame 011328/0980

Assignment of Assignor's Interest

Recorded: 2000-11-16 Pages: 3
Assignors
TEWS, HELMUT HORST
Executed: 2000-11-09
BEINTNER, JOCHEN
Executed: 2000-11-09
Assignee
INFINEON TECHNOLOGIES NORTH AMERICA CORP.,
1730 NORTH FIRST STREET, SAN JOSE, CALIFORNIA, 95112
Covered Property (1)
Nitrogen Implantation Using a Shadow Effect to Control Gate Oxide Thickness in Dram Semiconductor
Patent: 6,967,147 →
Application: 09/714,356 →
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 10, 2004
From: INFINEON TECHNOLOGIES NORTH AMERICA CORP.
To: INFINEON TECHNOLOGIES AG
Reel/Frame 015129/0578 →
Assignment of Assignor's Interest Jan 13, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023828/0001 →
Assignment of Assignor's Interest May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
Assignment of Assignor's Interest Sep 9, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036575/0368 →