Patent Assignment
Reel/Frame 012926/0744
Assignment of Assignor's Interest
Recorded: 2002-05-21
Pages: 3
Assignors
USUI, AKIRA
Executed: 2002-05-14
SHIBATA, MASATOMO
Executed: 2002-05-14
OSHIMA, YUICHI
Executed: 2002-05-14
Assignees
NEC CORPORATION
7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN
HITACHI CABLE, LTD.
6-1, OTEMACHI 1-CHOME, CHIYODA-KU, TOKYO, JAPAN
Covered Property
(1)
Method of Forming an Epitaxially Grown Nitride-Based Compound Semiconductor Crystal Substrate Structure and the Same Substrate Structure
Related Assignments
(4)
Other recorded transfers of the patent in this record — the chain of ownership.
Merger
Jan 14, 2015
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034757/0313 →
Assignment of Assignor's Interest
Nov 3, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY LIMITED
Reel/Frame 036941/0655 →
Assignment of Assignor's Interest
May 2, 2016
From: NEC CORPORATION
To: SCIOCS COMPANY LIMITED
Reel/Frame 038431/0753 →
Assignment of Assignor's Interest
May 3, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL CO., LTD.
Reel/Frame 038444/0891 →