IP Library › Granted Patent US 6,812,051
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US 6,812,051 · Confirmation No. 6161

METHOD OF FORMING AN EPITAXIALLY GROWN NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL SUBSTRATE STRUCTURE AND THE SAME SUBSTRATE STRUCTURE

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Quick Facts
Patent No.
US 6,812,051
App. No.
10/150,960
Filed
2002-05-21
Granted
2004-11-02
Pub. No.
US20030017685A1
Art Unit
2812
PTA
-48 days