Patent Assignment
Reel/Frame 036941/0655
Assignment of Assignor's Interest
Recorded: 2015-11-03
Pages: 9
Assignor
HITACHI METALS, LTD.
Executed: 2015-07-27
Assignee
SCIOCS COMPANY LIMITED
880 ISAGOZAWA-CHO, HITACHI-SHI, IBARAKI-KEN, JAPAN
Covered Properties
(2)
Method of Forming an Epitaxially Grown Nitride-Based Compound Semiconductor Crystal Substrate Structure and the Same Substrate Structure
Epitaxially Grown Nitride-Based Compound Semiconductor Crystal Substrate Structure with Low Dislocation Density
Related Assignments
(5)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 21, 2002
From: USUI, AKIRA; SHIBATA, MASATOMO; OSHIMA, YUICHI
To: NEC CORPORATION; HITACHI CABLE, LTD.
Reel/Frame 012926/0744 →
Merger
Jan 14, 2015
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034757/0313 →
Assignment of Assignor's Interest
Jul 13, 2015
From: USUI, AKIRA; SHIBATA, MASATOMO; OSHIMA, YUICHI
To: NEC CORPORATION; HITACHI CABLE, LTD.
Reel/Frame 036098/0290 →
Assignment of Assignor's Interest
May 2, 2016
From: NEC CORPORATION
To: SCIOCS COMPANY LIMITED
Reel/Frame 038431/0753 →
Assignment of Assignor's Interest
May 3, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL CO., LTD.
Reel/Frame 038444/0891 →