IP Library › Assignment 016161/0691
Patent Assignment
Reel/Frame 016161/0691

Assignment of Assignor's Interest

Recorded: 2005-01-05 Pages: 3
Assignors
LU, WEI
Executed: 2004-12-20
HSIA, LIANG CHOO
Executed: 2004-12-20
Assignee
CHARTERED SEMICONDUCTOR MANUFACTURING LTD
60 WOODLANDS INDUSTRIAL PARK D, STREET TWO, SINGAPORE, 738406, SINGAPORE
Covered Property (1)
High Density Plasma and Bias Rf Power Process to Make Stable Fsg with Less Free F and Sin with Less H to Enhance the Fsg/Sin Integration Reliability
Patent: 7,271,110 →
Application: 11/029,835 →
Publication: US 2006/0148270
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Nov 20, 2018
From: CHARTERED SEMICONDUCTOR MANUFACTURING PTE. LTD.
To: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
Reel/Frame 047614/0081 →
Assignment of Assignor's Interest Jul 2, 2019
From: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
To: ALSEPHINA INNOVATIONS INC.
Reel/Frame 049669/0775 →
Assignment of Assignor's Interest Jul 16, 2020
From: ALSEPHINA INNOVATIONS, INC.
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 053351/0839 →