IP Library Assignment 016305/0436
Patent Assignment
Reel/Frame 016305/0436

Assignment of Assignor's Interest

Recorded: 2005-07-26 Pages: 3
Assignors
HUANG, MIN-SAN
Executed: 2005-06-06
HSU, HANN-JYE
Executed: 2005-06-06
LAI, LIANG-CHUAN
Executed: 2005-06-06
Assignee
POWERCHIP SEMICONDUCTOR CORP.
NO. 12, LI-HSIN RD. I, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, TAIWAN
Covered Property (1)
Method for Forming Trench Gate Dielectric Layer
Patent: 7,205,217 →
Application: 11/161,177 →
Publication: US 2006/0160306
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Aug 11, 2010
From: POWERCHIP SEMICONDUCTOR CORP.
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 024812/0700 →
Change of Name Jun 27, 2019
From: POWERCHIP SEMICONDUCTOR CORP.
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 049623/0635 →
Change of Name Jul 16, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049757/0536 →