Patent Assignment
Reel/Frame 049623/0635
Change of Name
Recorded: 2019-06-27
Pages: 3
Assignor
POWERCHIP SEMICONDUCTOR CORP.
Executed: 2010-08-09
Assignee
POWERCHIP TECHNOLOGY CORPORATION
NO.12, LI-HSIN ROAD 1, HSINCHU SCIENCE PARK,, HSINCHU, TAIWAN
Covered Properties
(20)
Method for Fabricating Semiconductor Device
Method for Forming Trench Gate Dielectric Layer
Non-Volatile Memory and Manufacturing and Operating Method Thereof
Flash Memory
Non-Volatile Memory Including Assist Gate
Method for Manufacturing Semiconductor Devices and Plug
Non-Volatile Memory and Fabricating Method and Operating Method Thereof
Wafer Measuring Fixture
Method of Operating P-Channel Memory
Non-Volatile Memory Structure and Method of Fabricating Non-Volatile Memory
Non-Volatile Memory Device
Semiconductor Device Having Self-Aligned Contact
Programmable and Erasable Digital Switch Device and Fabrication Method and Operating Method Thereof
Split gate flash memory
Method for Forming Buried Doped Region
Methods for Determining Tool Assignment Preference and Manufacturing Systems Using the Same
Methods and Systems for Semiconductor Defect Detection
Method of Piping Defect Detection
Inspection Methods for a Semiconductor Device
Real-Time Management Systems and Methods for Manufacturing Management and Yield Rate Analysis Integration
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Change of Name
Jul 16, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049757/0536 →
Change of Name
Jul 16, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049757/0550 →
Assignment of Assignor's Interest
Apr 8, 2020
From: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 052337/0735 →
Assignment of Assignor's Interest
Sep 7, 2020
From: POWERCHIP TECHNOLOGY CORPORATION
To: NEXCHIP SEMICONDUCTOR CORPORATION
Reel/Frame 053704/0522 →