Patent Assignment
Reel/Frame 049757/0550
Change of Name
Recorded: 2019-07-16
Pages: 11
Assignor
POWERCHIP TECHNOLOGY CORPORATION
Executed: 2019-06-28
Assignee
POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
NO. 18, LI-HSIN RD. 1, HSINCHU SCIENCE PARK,, HSINCHU, TAIWAN
Covered Properties
(20)
Semiconductor Device Having Self-Aligned Contact
Method for Fabricating Non-Volatile Memory
Programmable and Erasable Digital Switch Device and Fabrication Method and Operating Method Thereof
Split gate flash memory
Method for Forming Buried Doped Region
Nand Flash Memory Cell Row and Manufacturing Method Thereof
Method for Fabricating Semiconductor Device and Wire with Silicide
Method of Fabricating Semiconductor Device
Non-Volatile Memory and Fabricating Method Thereof
Patent:
7,102,193 →
Application:
11/164,063 →
Method for Manufacturing Semiconductor Device and Non-Volatile Memory
Method of Fabricating Non-Volatile Memory
Patent:
7,148,107 →
Application:
11/164,211 →
Method for Manufacturing Gate Dielectric Layer
Anti-Punch-Through Semiconductor Device
Method for Fabricating Conductive Line
Non-Volatile Memory
Method of Fabricating Non-Volatile Memory
Method of Fabricating Non-Volatile Memory
Fabricating Method of Non-Volatile Memory
Flash Memory and Manufacturing Method Thereof
A Non-Volatile Memory
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Change of Name
Jun 27, 2019
From: POWERCHIP SEMICONDUCTOR CORP.
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 049623/0635 →
Change of Name
Jul 1, 2019
From: POWERCHIP SEMICONDUCTOR CORP.
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 049648/0410 →
Assignment of Assignor's Interest
Apr 8, 2020
From: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 052337/0735 →
Assignment of Assignor's Interest
Sep 7, 2020
From: POWERCHIP TECHNOLOGY CORPORATION
To: NEXCHIP SEMICONDUCTOR CORPORATION
Reel/Frame 053704/0522 →