IP Library Assignment 024812/0700
Patent Assignment
Reel/Frame 024812/0700

Change of Name

Recorded: 2010-08-11 Received: 2010-08-11 Pages: 7
Assignor
POWERCHIP SEMICONDUCTOR CORP.
Executed: 2010-08-10
Assignee
POWERCHIP TECHNOLOGY CORPORATION
NO.12, LI-HSIN ROAD 1, HSINCHU SCIENCE PARK, HSINCHU, TWX, TAIWAN
Covered Properties (25)
Manufacturing Method of Semiconductor Device Having Self-Aligned Contact
Application: 12/562,142 →
Memory Programming Method and Data Access Method
Application: 12/335,784 →
Operating Method of One-Time Programmable Read Only Memory
Application: 12/191,844 →
Probe System
Application: 11/762,065 →
Method for Fabricating a Nonvolatile Memory Cell
Application: 11/735,440 →
Image Sensor and Fabrication Method Thereof
Application: 11/686,957 →
Image Sensor Structure with Recessed Separator Layer
Application: 11/706,194 →
Method of Fabricating Non-Volatile Memory
Application: 11/558,453 →
Image Sensor and Fabrication Method Thereof
Application: 11/465,815 →
Probe Apparatus
Application: 11/308,670 →
Method for Fabricating Conductive Line
Application: 11/164,950 →
Method for Fabricating Non-Volatile Memory
Application: 11/162,833 →
Method of Fabricating Non-Volatile Memory
Application: 11/162,082 →
Method of Fabricating Conductive Lines with Silicide Layer
Application: 11/162,115 →
Method of Fabricating Non-Volatile Memory
Application: 11/161,648 →
Method for Forming Trench Gate Dielectric Layer
Application: 11/161,177 →
Method for Manufacturing Anti-Punch Through Semiconductor Device
Application: 10/908,379 →
Structure, Fabrication Method and Operating Method for Flash Memory
Application: 10/829,414 →
Method of Improving a Resolution of Contact Hole Patterns by Utilizing Alternate Phase Shift Principle
Application: 10/605,377 →
[Memory Device Structure and Method of Fabricating the Same]
Application: 10/604,366 →
Method of Fabricating Flash Memory
Application: 10/249,256 →
Structure, Fabrication Method and Operating Method for Flash Memory
Application: 10/269,460 →
Manufacturing Method of Flash Memory
Application: 10/064,667 →
Memory Device Structure and Method of Fabricating the Same
Application: 10/064,383 →
Method of Manufacturing Memory Device
Application: 10/064,092 →