Patent Assignment
Reel/Frame 016696/0560
Assignment of Assignor's Interest
Recorded: 2005-10-28
Pages: 3
Assignee
POWERCHIP SEMICONDUCTOR CORP.
NO. 12, LI-HSIN RD. I, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, TAIWAN
Covered Property
(1)
Method for Forming Buried Doped Region
Related Assignments
(4)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name
Jun 27, 2019
From: POWERCHIP SEMICONDUCTOR CORP.
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 049623/0635 →
Change of Name
Jul 16, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049757/0550 →
Assignment of Assignor's Interest
Apr 8, 2020
From: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 052337/0735 →
Assignment of Assignor's Interest
Sep 7, 2020
From: POWERCHIP TECHNOLOGY CORPORATION
To: NEXCHIP SEMICONDUCTOR CORPORATION
Reel/Frame 053704/0522 →