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Patent Assignment
Reel/Frame 016795/0891

Assignment of Assignor's Interest

Recorded: 2005-11-18 Pages: 3
Assignors
CHEN, WEN-JI
Executed: 2005-06-28
CHEN, TUNG-PO
Executed: 2005-06-28
HSUEH, KAI-AN
Executed: 2005-06-28
ZHENG, SHENG-HONE
Executed: 2005-06-28
Assignee
POWERCHIP SEMICONDUCTOR CORP.
NO. 12, LI-HSIN RD. I, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, TAIWAN
Covered Property (1)
Method for Manufacturing Gate Dielectric Layer
Patent: 7,273,787 →
Application: 11/164,332 →
Publication: US 2006/0281251
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Jul 1, 2019
From: POWERCHIP SEMICONDUCTOR CORP.
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 049648/0410 →
Change of Name Jul 16, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049757/0550 →
Assignment of Assignor's Interest Apr 8, 2020
From: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 052337/0735 →
Assignment of Assignor's Interest Sep 7, 2020
From: POWERCHIP TECHNOLOGY CORPORATION
To: NEXCHIP SEMICONDUCTOR CORPORATION
Reel/Frame 053704/0522 →