Patent Assignment
Reel/Frame 017555/0571
Assignment of Assignor's Interest
Recorded: 2006-02-13
Received: 2006-02-17
Pages: 22
Assignor
NIPPON STEEL CORPORATION
Executed: 2005-12-08
Assignee
PEGRE SEMICONDUCTORS, LLC
2215-B RENAISSANCE DR., SUITE 5, LAS VEGAS, NV, 89119, UNITED STATES
Covered Properties
(13)
Non-Volatile Semiconductor Memory with Single Layer Gate Structure
Application:
10/953,094 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
10/725,318 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
10/653,237 →
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
10/642,765 →
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
10/642,764 →
System and Method for Reading Data Stored in a Semiconductor Device Having Multilevel Memory Cells
Application:
10/643,188 →
Device and Method for Reading Data Stored in a Semiconductor Device Having Multilevel Memory Cells
Application:
10/643,187 →
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
10/643,222 →
Multi-Level Type Nonvolatile Semiconductor Memory Device
Application:
10/303,726 →
Non-Volaltile Semicondutor Memory with Single Layer Gate Structure
Application:
10/270,449 →
Semiconductor Device Having a Shield Plate for Applying Electric Potential to the Semiconductor Substrate
Application:
10/269,951 →
Multi-Level Type Nonvolatile Semiconductor Memory Device
Application:
10/146,949 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
10/118,039 →