Patent Assignment
Reel/Frame 019028/0674
Assignment of Assignor's Interest
Recorded: 2007-03-19
Received: 2007-03-19
Pages: 6
Assignor
ADVANCED MICRO DEVICES, INC.
Executed: 2007-01-31
Assignee
SPANSION INC.
915 DEGUIGNE DRIVE, P.O. BOX 3453, MAIL STOP 250, SUNNYVALE, CA, 94088-3453, UNITED STATES
Covered Properties
(7)
Flash Memory Having Improved Core Field Isolation in Select Gate Regions
Application:
10/260,061 →
Flash Memory Device and a Method of Fabrication Thereof
Application:
09/941,370 →
Method and System for Etching Tunnel Oxide to Reduce Undercutting During Memory Array Fabrication
Application:
09/925,205 →
Using Hot Carrier Injection to Control Over-Programming in a Non-Volatile Memory Cell Having an Oxide-Nitride-Oxide (Ono) Structure
Application:
09/902,332 →
Method for reduced gate aspect ratio to improve gap-fill after spacer etch
Application:
09/811,288 →
Reduction of voltage stress across a gate oxide and across a junction within a high voltage transistor of an erasable memory device
Application:
09/774,509 →
Flash Memory Device with Monitor Structure for Monitoring Second Gate Over-Etch
Application:
09/774,327 →