Patent Assignment
Reel/Frame 019353/0699
Assignment of Assignor's Interest
Recorded: 2007-05-30
Pages: 3
Assignor
HITACHI, LTD.
Executed: 2007-05-09
Assignee
RENESAS TECHNOLOGY CORP.
6-2, OTEMACHI 2-CHOME, CHIYODA-KU, TOKYO, JAPAN
Covered Properties
(6)
Method for Manufacturing Semiconductor Integrated Circuit Device Having Deposited Layer for Gate Insulation
Method for Manufacturing Semiconductor Integrated Circuit Device Having Floating Gate and Deposited Film
Semiconductor Integrated Circuit Device and Having Deposited Layer for Gate Insulation
Semiconductor Integrated Circuit Device Having Deposited Layer for Gate Insulation
Semiconductor Integrated Circuit Device Having Deposited Layer for Gate Insulation
Semiconductor Integrated Circuit Device Having Deposited Layer for Gate Insulation
Related Assignments
(5)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Dec 9, 1998
From: SHUKURI, SHOJI; SUZUKI, NORIO; TANIGUCHI, YASUHIRO
To: HITACHI LTD.
Reel/Frame 009649/0689 →
Assignment of Assignor's Interest
Sep 26, 2003
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 014569/0585 →
Assignment of Assignor's Interest
Apr 16, 2004
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 015261/0938 →
Merger
Jul 30, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025204/0512 →
Change of Address
Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →