Patent Assignment
Reel/Frame 022757/0871
Security Agreement
Recorded: 2009-06-01
Received: 2009-06-01
Pages: 6
Assignor
JOHNSON OUTDOORS WATERCRAFT INC.
Executed: 2009-05-29
Assignee
JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
10 SOUTH DEARBORN, CHICAGO, IL, 60603, UNITED STATES
Covered Properties
(34)
Multi-Bit Spin Memory
Application:
11/929,577 →
Spin Based Memory Coupled to Cmos Amplifier
Application:
11/745,167 →
Spin Based Magnetic Sensor
Application:
11/741,984 →
Compensating the Effects of Non-Synchronous Writing of Erasable Servo Marks
Application:
11/639,728 →
Spin Based Device with Low Transmission Barrier
Application:
11/373,667 →
Spin Based Sensor Device
Application:
11/369,661 →
Disk Drive with Altitude Detection Air Vane
Application:
11/222,553 →
Watermark Embedding and Detection of a Motion Image Signal
Application:
10/542,837 →
Digital Processing Device with Disparate Magnetoelectronic Gates
Application:
11/138,989 →
Magnetic Memory Device Structure
Application:
11/133,518 →
Magnetoelectronic Memory Element with Inductively Coupled Write Wires
Application:
11/120,540 →
Magnetic Field Sensor Using Spin Polarized Current
Application:
11/091,957 →
Method of Operating a Stacked Spin Based Memory
Application:
11/086,603 →
Method of Extracting a Watermark
Application:
10/514,903 →
Hybrid Semiconductor - Magnetic Spin Based Memory with Low Transmission Barrier
Application:
10/974,037 →
Magnetic Spin Based Memory with Semiconductor Selector
Application:
10/962,254 →
Magnetic Spin Based Memory with Inductive Write Lines
Application:
10/962,252 →
Ferromagnetic Layer Compositions and Structures for Spin Polarized Devices, Including Memory Devices
Application:
10/962,253 →
Magnetoelectronic Memory Element with Inductively Coupled Write Wires
Application:
10/853,791 →
Hybrid Semiconductor-Magnetic Device and Method of Operation
Application:
10/853,545 →
Magnetoelectronic Device with Variable Magnetic Write Field
Application:
10/853,792 →
Watermark Embedding
Application:
10/495,952 →
Method of Making Hybrid Semiconductor - Magnetic Spin Based Memory
Application:
10/776,939 →
Hybrid Semiconductor - Magnetic Spin Based Memory with Low Transmission Barrier
Application:
10/776,978 →
Hybrid Semiconductor - Magnetic Spin Based Memory
Application:
10/776,987 →
Stacked Hybrid Semiconductor-Magnetic Spin Based Memory
Application:
10/776,144 →
Perpendicular Media with Improved Corrosion Performance
Application:
10/742,100 →
Embedding and Detection of Watermark in a Motion Image Signal
Application:
10/480,339 →
Generation of Interleaved Parity Code Words Having Limited Running Digital Sum Values
Application:
10/715,078 →
Detection of Auxiliary Data in an Information Signal
Application:
10/409,436 →
Magnetoelectronic Memory Element with Inductively Coupled Write Wires
Application:
10/100,210 →
Apparel Having Side-Adjustable Shoulder Supports
Application:
09/865,087 →
Detection of Auxiliary Data in an Information Signal
Application:
09/806,796 →
Personal Flotation Device Back Panel
Application:
29/138,738 →