Patent Assignment
Reel/Frame 049746/0970
Assignment of Assignor's Interest
Recorded: 2019-07-14
Pages: 11
Assignor
POWERCHIP TECHNOLOGY CORPORATION
Executed: 2019-06-28
Assignee
POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
NO. 18, LI-HSIN RD. 1, HSINCHU SCIENCE PARK,, HSINCHU, TAIWAN
Covered Properties
(20)
Nand Flash Memory Cell Row
Method of Building a Defect Database
Semiconductor Process and Yield Analysis Integrated Real-Time Management Method
[Method of Forming Floating Gate of Memory Device]
Patent:
6,812,120 →
Application:
10/708,351 →
Method and Related System for Semiconductor Equipment Prevention Maintenance Management
Method and Related System for Semiconductor Equipment Early Warning Management
Method of Fabricating Non-Volatile Memory Cell Adapted for Integration of Devices and for Multiple Read/Write Operations
Aseismatic Device
[Split Gate Flash Memory Cell and Manufacutirng Method Thereof]
[Flash Memory with Self-Aligned Split Gate and Methods for Fabricating and for Operating the Same]
Tool for Removing Particles from Reticle
[Non-Volatile Memory Cell and Manufacturing Method Thereof]
[Method of Fabricating Flash Memory Cell]
[Flash Memory Structure and Operating Method Thereof]
Method of Forming Barrier Layer
[Flash Memory Device Structure and Manufacturing Method Thereof]
[Pipe Trap]
[Method of Fabricating a Flash Memory]
Patent:
6,893,918 →
Application:
10/709,639 →
[Method of Fabricating a Flash Memory]
Structure, Fabrication Method and Operating Method for Flash Memory
Related Assignments
(2)
Other recorded transfers of the patents in this record — the chain of ownership.