Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
View Patent ↗In deposited silicon, n-type dopants such as phosphorus and arsenic tend to seek the surface of the silicon, rising as the layer is deposited. When a second undoped or p-doped silicon layer is deposited on n-doped silicon with no n-type dopant provided, a first thickness of this second silicon layer nonetheless tends to include unwanted n-type dopant which has diffused up from lower levels. This surface-seeking behavior diminishes when germanium is alloyed with the silicon. In some devices, it may not be advantageous for the second layer to have significant germanium content. In the present invention, a first heavily n-doped semiconductor layer (preferably at least 10 at % germanium) is deposited, followed by a silicon-germanium capping layer with little or no n-type dopant, followed by a layer with little or no n-type dopant and less than 10 at % germanium. The germanium in the first layer and the capping layer minimizes diffusion of n-type dopant into the germanium-poor layer above.
1. A semiconductor device comprising a layerstack, the layerstack comprising:
a first layer of deposited heavily n-doped semiconductor material above a substrate, the first layer at least about 50 angstroms thick;
a second layer of semiconductor material which is not heavily n-doped, wherein the semiconductor material of the second layer is a silicon-germanium alloy that is at least 10 at % germanium, the second layer at least about 100 angstroms thick, wherein the second layer is above and in contact with the first layer; and
a third layer of deposited semiconductor material which is not heavily n-doped above and in contact with the second layer, wherein the semiconductor material of the third layer is silicon or a silicon-germanium alloy that is less than 10 at % germanium,
wherein the first, second, and third layers reside in a semiconductor device.
2. The semiconductor device of claim 1 wherein the semiconductor material of the second layer is at least 20 at % germanium.
3. The semiconductor device of claim 1 wherein the semiconductor material of the third layer is no more than 5 at % germanium.
4. The semiconductor device of claim 1 wherein the first, second, and third layers are portions of a vertically oriented junction diode.
5. The semiconductor device of claim 4 wherein the diode is a p-i-n diode, and the third layer is undoped or lightly doped.
6. The semiconductor device of claim 4 wherein the first, second, and third layers have been patterned and etched to form a pillar.
7. The semiconductor device of claim 6 wherein the pillar is vertically disposed between a bottom conductor and a top conductor, wherein a nonvolatile memory cell comprises a portion of the bottom conductor, the pillar, and a portion of the top conductor.
8. The semiconductor device of claim 1 wherein the first layer is doped to a dopant concentration of at least about 5×10 19 dopant atoms/cm 3 .
9. The semiconductor device of claim 8 wherein the third layer has a dopant concentration less than about 5×10 17 dopant atoms/cm 3 of an n-type dopant.
10. A nonvolatile memory cell formed above a substrate, the memory cell comprising:
a portion of a bottom conductor above the substrate;
a portion of a top conductor above the bottom conductor; and
a diode vertically disposed between the bottom conductor and the top conductor, the diode comprising:
i) a first deposited layer of heavily n-doped semiconductor material;
ii) a second deposited layer of semiconductor material which is not heavily n-doped wherein the semiconductor material of the second layer is a silicon-germanium alloy that is at least 10 at % germanium, the second layer disposed above and in contact with the first layer; and
iii) a third deposited layer of semiconductor material which is not heavily n-doped, wherein the semiconductor material of the third layer is silicon or a silicon-germanium alloy that is less than 10 at % germanium, wherein the third layer is above and in contact with the second layer.
11. The nonvolatile memory cell of claim 10 wherein the semiconductor material of the first layer is a silicon-germanium alloy that is at least 10 at % germanium.
12. The nonvolatile memory cell of claim 10 wherein the first layer is doped to a dopant concentration of at least about 5×10 19 dopant atoms/cm 3 .
13. The nonvolatile memory cell of claim 12 wherein the third layer has a dopant concentration of less than about 5×10 17 dopant atoms/cm 3 of an n-type dopant.
14. The nonvolatile memory cell of claim 12 wherein the second layer has a dopant concentration of less than about 5×10 17 dopant atoms/cm 3 of an n-type dopant.
15. The nonvolatile memory cell of claim 10 wherein the semiconductor material of the third layer is silicon or a silicon-germanium alloy that is no more than 5 at % germanium.
16. The nonvolatile memory cell of claim 10 wherein the diode is in the form of a pillar.
17. The nonvolatile memory cell of claim 10 wherein the memory cell further comprises a reversible state-change element, the reversible state-change element disposed between the diode and the bottom conductor or between the diode and the top conductor.
18. The nonvolatile memory cell of claim 17 wherein the reversible state-change element comprises a layer of a resistivity-switching metal oxide or nitride compound selected from the group consisting of NiO, Nb 2 O 5 , TiO 2 , HfO 2 , Al 2 O 3 , CoO, MgO x , CrO 2 , VO, BN, and AlN.
19. The nonvolatile memory cell of claim 10 wherein the second layer is at least about 100 angstroms thick.
20. A monolithic three dimensional memory array comprising:
a) a first memory level formed above a substrate, the first memory level comprising:
i) a plurality of substantially parallel, substantially coplanar bottom conductors;
ii) a plurality of substantially parallel, substantially coplanar top conductors;
iii) a plurality of semiconductor junction diodes, each diode vertically disposed between one of the bottom conductors and one of the top conductors, wherein each diode comprises a first layer of heavily n-doped semiconductor material, a second layer of lightly n-doped, p-doped, or undoped silicon-germanium alloy wherein the second layer is at least 10 at % germanium, the second layer above the first layer, and a third layer of lightly n-doped, p-doped or undoped silicon or silicon-germanium alloy wherein the third layer is less than 10 at % germanium, the third layer above the second layer; and
b) at least a second memory level monolithically formed above the first memory level.