Method of manufacturing a laterally diffused metal oxide semiconductor device
View Patent ↗A method of manufacturing a laterally diffused metal oxide semiconductor (LDMOS) device, and an integrated circuit associated therewith. The method includes forming a lightly-doped source/drain region with a first dopant, the lightly-doped source/drain region located between first and second isolation structures. The method further includes creating a gate over the lightly-doped source/drain region. In one advantageous embodiment of the present invention, the method further includes diffusing a second dopant at least partially across the lightly-doped source/drain region and under the gate to form a first portion of a channel.
1. A method of manufacturing a laterally diffused metal oxide semiconductor (LDMOS) device, comprising:
forming first and second isolation structures within a substrate;
forming a lightly-doped source/drain region between the first and second isolation structures with only a first dopant and without the use of a mask layer between the first and second isolation structures; and
creating a gate over the lightly-doped source/drain region;
diffusing a second dopant at least partially across the lightly-doped source/drain region and under the gate to form a first portion of a channel; and
placing a heavy concentration of the first dopant in a region adjacent the second dopant proximate a source side of the gate, and in the lightly-doped source/drain region adjacent a drain side of the gate.
2. The method as recited in claim 1 wherein forming includes forming a lightly-doped source/drain region with a first N-type dopant.
3. The method as recited in claim 2 wherein the first N-type dopant has an implant dose ranging from about 1E12 atoms/cm 2 to about 1E13 atoms/cm 2 .
4. The method as recited in claim 1 wherein diffusing the second dopant includes diffusing a P-type dopant having an implant dose ranging from about 1E13 atoms/cm 2 to about 1E14 atoms/cm 2 .
5. The method as recited in claim 1 wherein diffusing the second dopant includes diffusing a P-type dopant having an implant dose about 100 times higher than an implant dose of the first dopant.
6. The method as recited in claim 1 wherein placing includes placing the heavy concentration of the first dopant in the lightly-doped source/drain region a distance ranging from about 2000 nm to about 3000 nm from the drain side of the gate.
7. The method as recited in claim 1 wherein forming the lightly-doped source/drain region includes forming the lightly-doped source/drain region using a blanket implant process over the entire substrate.