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App. No. 09/788,045 · Confirmation No. 4171

METHOD OF FORMING A VOID-FREE INTERLAYER DIELECTRIC (ILD0) FOR 0.18-UM FLASH MEMORY TECHNOLOGY AND SEMICONDUCTOR DEVICE THEREBY FORMED

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 Code Description Pages PDF
2001-02-16 TRNA Transmittal of New Application 5 View
2001-02-16 SPEC Specification 4 View
2001-02-16 CLM Claims 7 View
2001-02-16 ABST Abstract 1 View
2001-02-16 DRW Drawings-only black and white line drawings 4 View
2001-02-16 OATH Oath or Declaration filed 2 View
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Quick Facts
App. No.
09/788,045
Filed
2001-02-16
Granted
2002-12-03
Art Unit
2829
PTA
0 days