IP Library › Granted Patent US 6,674,138
Granted Patent Utility
US 6,674,138 · Confirmation No. 3664

USE OF HIGH-K DIELECTRIC MATERIALS IN MODIFIED ONO STRUCTURE FOR SEMICONDUCTOR DEVICES

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 Code Description Pages PDF
2003-10-28 A.NA Amendment after Notice of Allowance (Rule 312) 1 View
2003-10-28 SPEC Specification 1 View
2003-10-28 REM Applicant Arguments/Remarks Made in an Amendment 1 View
2003-08-25 IFEE Issue Fee Payment (PTO-85B) 1 View
2001-12-31 TRNA Transmittal of New Application 2 View
2001-12-31 SPEC Specification 26 View
2001-12-31 CLM Claims 5 View
2001-12-31 ABST Abstract 1 View
2001-12-31 DRW Drawings-only black and white line drawings 4 View
2001-12-31 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,674,138
App. No.
10/036,757
Filed
2001-12-31
Granted
2004-01-06
Art Unit
2824
PTA
-30 days