IP Library Granted Patent US 7,033,664
Granted Patent B2
US 7,033,664 · App. 10/277,498 · Granted Apr 25, 2006

Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby

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Quick Facts
Patent No.
US 7,033,664
App. No.
10/277,498
Granted
Apr 25, 2006
Kind
B2
Abstract

A crystalline substrate based device including a crystalline substrate having formed thereon a microstructure and at least one packaging layer which is formed over the microstructure and defines therewith at least one gap between the crystalline substrate and the at least one packaging layer and at least one opening in the packaging layer communicating with the at least one gap.

Claims (45)

1. A crystalline substrate based device comprising:

a crystalline substrate having formed thereon a microstructure;

at least one chip scale packaging layer which is formed over said microstructure;

a spacer element, disposed between said at least one chip scale packaging layer and said crystalline substrate, said crystalline substrate, said at least one chip scale packaging layer and said spacer element defining at least one gap between said crystalline substrate and said at least one chip scale packaging layer, said crystalline substrate, said microstructure and said at least one chip scale packaging layer forming a chip scale package having two major faces and a plurality of edge faces extending along the periphery of and between said major faces;

at least one opening in said spacer element along one of said plurality of edge faces of said chip scale package communicating with said at least one gap; and

at least one electrical contact formed on said chip scale package.

2. A crystalline substrate based device according to claim 1 and wherein said at least one chip scale packaging layer is attached to said crystalline substrate using an adhesive.

3. A crystalline substrate based device according to claim 1 and wherein said at least one chip scale packaging layer is attached to said crystalline substrate using a soldering material.

4. A crystalline substrate based device according to claim 1 and wherein said at least one chip scale packaging layer is attached to said crystalline substrate using intermetalic layer.

5. A crystalline substrate based device according to claim 2 and wherein said adhesive comprises Thermoplastic materials.

6. A crystalline substrate based device according to claim 2 and wherein said adhesive comprises Thermosetting materials.

7. A crystalline substrate based device according to claim 2 and wherein said adhesive comprises epoxy.

8. A crystalline substrate based device according to claim 1 and wherein said crystalline substrate comprises silicon.

9. A crystalline substrate based device according to claim 1 and wherein said crystalline substrate comprises lithium niobate.

10. A crystalline substrate based device according to claim 1 and wherein said crystalline substrate comprises lithium tantalite.

11. A crystalline substrate based device according to claim 1 and wherein said crystalline substrate comprises quartz.

12. A crystalline substrate based device according to claim 1 and wherein said crystalline substrate comprises GaAs.

13. A crystalline substrate based device according to claim 1 and wherein said at least one chip scale packaging layer is at least partially transparent.

14. A crystalline substrate based device according to claim 13 and wherein said at least one chip scale packaging layer is transparent at least in the spectral range of 100 nm–20 micron.

15. A crystalline substrate based device according to claim 1 and wherein said at least one gap comprises a plurality of gaps.

16. A crystalline substrate based device according to claim 1 and wherein said microstructure comprises a micromechanical structure.

17. A crystalline substrate based device according to claim 1 and wherein said microstructure comprises a microelectronic structure.

18. A crystalline substrate based device according to claim 1 and wherein said microstructure comprises an optoelectronic structure.

19. A packaged crystalline substrate comprising:

a substrate having formed thereon a microstructure;

at least one chip scale package which is attached to said substrate over said microstructure, said at least one chip scale package having two major faces and a plurality of edge faces extending along the periphery of and between said major faces, and including a spacer element disposed between said at least one chip scale package and said substrate, said substrate, said at least one chip scale package and said spacer element defining at least one gap between said substrate and said at least one chip scale package, said at least one chip scale package containing at least one opening along at least one of said plurality of edge faces of said at least one chip scale package communicating with said at least one gap; and

at least one electrical contact formed on said at least one chip scale package.

20. A packaged crystalline substrate according to claim 19 and wherein said at least one chip scale package is attached to said substrate using an adhesive.

21. A packaged crystalline substrate according to claim 19 and wherein said at least one chip scale package is attached to said substrate using a soldering material.

22. A packaged crystalline substrate according to claim 19 and wherein said at least one chip scale package is attached to said substrate using intermetalic layer.

23. A packaged crystalline substrate based device according to claim 20 and wherein said adhesive comprises Thermosetting materials.

24. A packaged crystalline substrate based device according to claim 20 and wherein said adhesive comprises Thermoplastic materials.

25. A packaged crystalline substrate based device according to claim 20 and wherein said adhesive comprises epoxy.

26. A packaged crystalline substrate according to claim 19 and wherein said substrate comprises silicon.

27. A packaged crystalline substrate according to claim 19 and wherein said substrate comprises lithium niobate.

28. A packaged crystalline substrate according to claim 19 and wherein said substrate comprises lithium tantalite.

29. A packaged crystalline substrate according to claim 19 and wherein said substrate comprises quartz.

30. A packaged crystalline substrate according to claim 19 and wherein said substrate comprises GaAs.

31. A packaged crystalline substrate according to claim 19 and wherein said at least one chip scale package is at least partially transparent.

32. A packaged crystalline substrate according to claim 19 and wherein said at least one gap comprises a plurality of gaps.

33. A packaged crystalline substrate according to claim 19 and wherein said microstructure comprises a micromechanical structure.

34. A packaged crystalline substrate according to claim 19 and wherein said microstructure comprises a microelectronic structure.

35. A packaged crystalline substrate according to claim 19 and wherein said microstructure comprises an optoelectronic structure.

36. A packaged crystalline substrate according to claim 19 and wherein said at least one gap is filled with fluid.

37. A crystalline substrate based device according to claim 31 and wherein said at least one chip scale packaging layer is transparent at least in the spectral range of 100 nm–20 micron.

Assignments (9)
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2013
From: DIGITALOPTICS CORPORATION EUROPE LIMITED
To: INVENSAS CORPORATION
Reel/Frame 030065/0817 →
CORRECTION TO REEL 026739 FRAME 0875 TO CORRECTION THE ADDRESS OF RECEIVING PARTY. Recorded Oct 26, 2011
From: TESSERA TECHNOLOGIES IRELAND LIMITED
To: DIGITALOPTICS CORPORATION EUROPE LIMITED
Reel/Frame 027137/0397 →
CHANGE OF NAME Recorded Aug 11, 2011
From: TESSERA TECHNOLOGIES IRELAND LIMITED
To: DIGITALOPTICS CORPORATION EUROPE LIMITED
Reel/Frame 026739/0875 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2010
From: TESSERA TECHNOLOGIES HUNGARY HOLDING LIMITED LIABILITY COMPANY
To: TESSERA TECHNOLOGIES IRELAND LIMITED
Reel/Frame 025592/0734 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2006
From: SHELLCASE LTD., ALSO SOMETIMES KNOWN AS SHELLCASE, LTD.
To: TESSERA TECHNOLOGIES HUNGARY KFT.
Reel/Frame 017552/0170 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 22, 2002
From: ZILBER, GIL; KATRARO, REUVEN; TEOMIM, DORON
To: SHELLCASE LTD.
Reel/Frame 013415/0188 →