A mask used for imaging nearly dense features in a substrate. Scatter dots are disposed on the mask in proximity to the nearly dense features, where the scatter dots adjust photon levels of the nearly dense features to a desired level. The adjustment is controlled by selective adjustment of a duty cycle and degree of stagger of the scatter dots. In this manner, the scatter dots adjust the optical properties of the nearly dense features to be very similar to the optical properties of dense features, which enables more accurate imaging of the nearly dense features on the substrate. However, because the scatter dots are discontinuous, they do not overcorrect in the same manner that a scatter bar formed at a minimum resolution might overcorrect. Further, there is a reduced likelihood that the scatter dots would actually print on the substrate.
1. In a mask used for imaging nearly dense features in a substrate, the improvement comprising scatter dots disposed on the mask in proximity to the nearly dense features, where the scatter dots adjust photon levels of the nearly dense features to a desired level, where the adjustment is controlled by selective adjustment of a duty cycle and degree of stagger of the scatter dots.
2. The mask of claim 1 wherein the mask is formed on a quartz substrate.
3. The mask of claim 1 wherein the mask is formed on a sapphire substrate.
4. The mask of claim 1 wherein the scatter dots and nearly dense features are formed of chrome.
5. The mask of claim 1 wherein an increase in the duty cycle of the scatter dots decreases the photon levels.
6. The mask of claim 1 wherein a decrease in the duty cycle of the scatter dots increases the photon levels.
7. The mask of claim 1 wherein an increase in the stagger of the scatter dots decreases a likelihood of printing the scatter dots.
8. A photolithographic mask used for imaging features on a monolithic integrated circuit substrate coated with photoresist, the photolithographic mask comprising:
an optical substrate for receiving a light from a light source and passing the light in a substantially unchanged form to the monolithic integrated circuit substrate,
dense features disposed on the optical substrate, the dense features for receiving the light from the light source and substantially absorbing, reflecting, and otherwise prohibiting the light from passing through the dense features to the monolithic integrated circuit substrate, the dense features thereby creating accurate reproductions of the dense features in the light passing through the optical substrate around the dense features,
nearly dense features disposed on the optical substrate, the nearly dense features for receiving the light from the light source and substantially absorbing, reflecting, and otherwise prohibiting the light from passing through the nearly dense features to the monolithic integrated circuit substrate, the nearly dense features thereby creating imperfect reproductions of the nearly dense features in the light passing through the optical substrate around the nearly dense features, and
scatter dots disposed on the optical substrate in proximity to the nearly dense features, the scatter dots having a duty cycle and degree of stagger for converting the imperfect reproductions of the nearly dense features into accurate reproductions of the nearly dense features.
9. The mask of claim 8 wherein the optical substrate is a quartz substrate.
10. The mask of claim 8 wherein the optical substrate is a sapphire substrate.
11. The mask of claim 8 wherein the scatter dots, dense features, and nearly dense features are formed of chrome.
12. The mask of claim 8 wherein an increase in the duty cycle of the scatter dots decreases photon levels in the light passing through the optical substrate around the nearly dense features.
13. The mask of claim 8 wherein a decrease in the duty cycle of the scatter dots increases photon levels in the light passing through the optical substrate around the nearly dense features.
14. The mask of claim 8 wherein an increase in the stagger of the scatter dots decreases a likelihood of printing the scatter dots.
15. A method for imaging nearly dense features in a substrate, the method comprising the steps of:
passing light through a mask having the nearly dense features and onto the substrate,
attenuating the light around the nearly dense features with scatter dots disposed on the mask in proximity to the nearly dense features, and
selectively altering a degree of attenuation of the light by adjusting a duty cycle and degree of stagger of the scatter dots.
16. The method of claim 15 wherein the scatter dots and nearly dense features are formed of chrome.
17. The method of claim 15 wherein an increase in the duty cycle of the scatter dots decreases the degree of attenuation of the light.
18. The method of claim 15 wherein a decrease in the duty cycle of the scatter dots increases the degree of attenuation of the light.
19. The method of claim 15 wherein an increase in the stagger of the scatter dots decreases a likelihood of printing the scatter dots.
20. The method of claim 15 wherein the step of attenuating the light with the scatter dots further comprises formed the scatter dots at a minimum resolution.